Project Grant 2425032

This $260,000 Project Grant awarded by the National Science Foundation (NSF) under the Mathematical and Physical Sciences (CFDA 47.049) program supports a collaborative effort by researchers at the University of Texas at Dallas, Johns Hopkins University, and the University of Texas at Austin to develop new materials for advanced computer chips.

The key objectives are to: (1) design novel indium-based extreme ultraviolet (EUV) resists using computational and machine learning tools; (2) synthesize and characterize precursors for indium oxide transistors; (3) evaluate the performance of the resist films; and (4) create high-performance indium oxide transistors using photonically cured EUV-patterned resists. This interdisciplinary project aims to leverage indium's high EUV absorption and the potential of indium oxide transistors to enable smaller, more precise chip features, improved device performance, and reduced production costs and environmental impact. The research plan also includes a workforce development program to train community college students for careers in the semiconductor industry.

Under the sub-awards, the University of Texas at Austin will build an EUV lithography system to characterize the resist sensitivity, contrast, and line edge roughness, while Johns Hopkins University will synthesize and provide specialized indium-based precursor materials and chromophores to support the project's research objectives.