Contact Metallization for High-Temperature GaN Amplifiers

NASA's Shared Services Center (NSSC) intends to award a sole-source contract to The Pennsylvania State University for contact metallization development for high-temperature GaN amplifiers, with capability statements due July 2, 2026. The procurement will proceed under FAR 12.102(a) authority using FAR Part 13 procedures and is classified as non-commercial.

Work will be performed at NASA Glenn Research Center. The vendor must deliver Ohmic contact metallization on AlGaN/GaN substrates enabling GaN amplifiers to operate at 800°C for a minimum of 1 hour in air, with longer operational duration preferred. Deliverables include documented test results demonstrating stable specific contact resistance of source/drain Ohmic contact metallization as a function of temperature in air for at least 1 hour, with extended stability periods preferred. The technology must be based on or aligned with results reported in IEEE Electron Device Letters 46, 1309, 2025. All processes and technical documentation must be delivered within 6 months of purchase order receipt to enable GaN amplifier fabrication and delivery.

Interested organizations may submit written capability statements by 4:00 p.m. CST on July 2, 2026, referencing ID 80NSSC26936838Q. Submissions will be evaluated to determine whether the Government should conduct this procurement on a competitive basis; however, the Government retains discretion to proceed with sole-source award or open competition. Oral communications are not acceptable. NASA FAR Supplement Clause 1852.215-84 regarding the Ombudsman applies.

NAICS 611310 (Colleges, Universities, and Professional Schools); PSC AJ11 (General Science and Technology R&D Services—Basic Research).