tab 04 SOW.pdf
PDF 362 KB Posted
- Solicitation number
- 80NSSC26936838Q
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This is a Statement of Work (SOW) for the development and delivery of Ohmic contact metallization technology for high-temperature gallium nitride (GaN) amplifiers.
The vendor is required to deliver Ohmic contact metallization on AlGaN/GaN substrates that enables the fabrication of GaN amplifiers capable of operating at 800°C for a minimum of 1 hour in air, with longer operational duration preferred. The vendor must provide documented test results demonstrating stable specific contact resistance of the source/drain Ohmic contact metallization as a function of temperature in air for at least 1 hour, with extended stability periods preferred. The technology must be based on or aligned with results reported in IEEE Electron Device Letters 46, 1309, 2025. The vendor shall deliver all processes and technical documentation to NASA within 6 months of receipt of the purchase order to enable GaN amplifier fabrication and delivery.
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Other files
| File | Type | Posted |
|---|---|---|
| Tab 07 Capability Statement.pdf |
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Text version
Statement of Work for Contact Metallization for High-Temperature GaN Amplifiers Capable of Enabling Amplifier Operation for 1 hour at 800 C in Air.
The vendor:
• Shall deliver Ohmic contact metallizaƟon on AlGaN/GaN that would enable the fabricaƟon of GaN amplifiers as reported in IEEE Electron Device LeƩers 46, 1309, 2025.
• The Ohmic contacts shall support GaN amplifier operaƟon at 800 °C for a minimum of 1 hour in air, although longer survival and operaƟonal duraƟon in air is preferred.
• Shall deliver documented test results that demonstrate stable specific contact resistance of the source/drain ohmic contact metallizaƟon as a funcƟon of temperature in air for a minimum of 1 hour, although longer survival and stability in air is preferred.
• Shall deliver processes to NASA to enable the GaN amplifier fabricaƟon and delivery within 6 months of receipt of purchase order.
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