UPDATED REDACTED Sole Source Justification Approval SOW 23-3F8.pdf

DMEA# 23-30

Defense Microelectronics Activity 4234 54th Street, McClellan, CA 95652

PWS# 23-3F8

Sole Source Justification

1. Agency and Contracting Activity:

Office of Secretary of Defense, Defense Microelectronics Activity (DMEA).

2. Nature/Description of Action:

New firm fixed price requirement to procure a 3D-Micromac microPRO XS Laser Anneal System from 3D-Micromac America LLC.

3. Description of Supplies/Services:

The purpose of this requirement is to procure a 3D-Micromac microPRO XS Laser Anneal System for laser anneal capability to form backside ohmic contact with nickel silicide for SiC device manufacturing and future high voltage device manufacturing.

4. Authority Cited:

FAR 13.106-3(a)(2), documented IAW FAR 13.501(a)(1)(ii) Simplified Procedures for Certain Commercial Items; 41 U.S.C. 1901.

5. Reason for Authority Cited:

The 3D-Micromac microPRO XS Laser Anneal System has a N2 inert process environment capability, automated wafer handling, and uses a UV laser for localized heat (for requirement in not affecting frontside). DMEA requires the 3D-Micromac microPRO XS Laser Anneal System to form backside ohmic contact for SiC devices. Laser anneal processing allows the silicidation to occur with localized heat to the backside without affecting frontside device formation. It will minimize thin wafer breakage risks and simplify flow integration by allowing process of backside nickel silicide at the end of the process flow after wafers are thinned. Moreover, there are many risks associated with the alternative formation of backside silicide midflow with rapid thermal processing tools. Midflow processing would require wafers to be thinned before backend processing is completed. This increases risks of thin wafer breakage because of subsequent process steps and handling. If thin wafer processing is not possible then manufacture of SiC device cannot be achieved. There is also a potential impact to yield with the backside exposed during subsequent processing and contamination risks.

Although there are other vendors in the laser anneal processing space, market research identified the 3D-Micromac microPRO XS Laser Anneal System as the only laser anneal system with the capability to meet DMEA’s need for backside silicide ohmic contact formation for SiC/ high-voltage device technology. Finally, if this tool is not acquired, DMEA’s high voltage SiC manufacturing capability will be impacted.

6. Efforts to Obtain Competition:

The solicitation, accompanied by this approved justification will be posted on SAM.gov. The Contracting Officer will consider quotations submitted by responsible sources in accordance with FAR 5.207(c)(16)(ii).

7. Fair and Reasonable Cost Determination: As stated in FAR 13.106-3(a), before making award, the contracting officer must determine that the proposed price is fair and reasonable. The contracting officer will perform price analysis on 3D Micromac America’s quote in accordance with FAR 13.106-3(a)(2).

Typed Name: Zonel Laborde Date: __________________________

Title: Contracting Officer Signature: ______________________

8. Market Research:

Market research consisted of a review of catalogs and other generally available product literature published by manufacturers, distributors, and dealers available on-line. Only one responsible source, a Small Business, 3D Micromac America LLC, was found to be capable of meeting this requirement. 3D-Micromac America LLC is the original equipment manufacturer and the only supplier to provide a COTS solution for wafer processing that meets DMEA’s ohmic contact formation requirements.

Additionally, research consisted of a review of other vendors in the laser anneal processing space, which identified the following, but which do not fully meet the requirements as described below:

IPG Photonics – primarily a laser manufacturer. IPG does not have a complete and wafer processing tool available. A custom option including research and development would be required to create a functional wafer processing tool.

Applied Materials – tool is only for 300mm wafers which does not meet DMEA requirement of 150mm wafer capability.

JSW (Japan) – tools are designed for use in flat panel display manufacturing. Their tools do not meet semiconductor process capability requirements for Nickel Silicide ohmic contact formation on SiC wafers.

EO Technics (Korea) – tools are designed for use in flat panel display manufacturing, cutting and welding of material and wafer scribing. They do not meet semiconductor process capability requirements for Nickel Silicide ohmic contract formation on SiC wafers.

9. Other Facts:

None.

10. Listing of Sources:

Entity Name: 3D-Micromac America LLC SAM Unique Entity ID: TBD (Contractor registration ongoing) CAGE: TBD (Contractor registration ongoing) Company Physical Address:

2151 Otoole Ave San Jose, CA, 95131-1330

11. Actions to Increase Competition:

LABORDE.ZONE

L.I.1233813938

Dig tally signed by

LABORDE.ZONEL.I.1233813938

Date 2023.08.08 12 36 14 -07 00'

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As current market research identified only one viable source, this requirement will be met utilizing a Sole Source Justification. However, market research will continue to be conducted to identify emerging vendors for future requirements.

12. Contracting Officer Certification: I certify that this justification is accurate and complete to the best of the contracting officer’s knowledge and belief.

Typed Name: Zonel Laborde Date: __________________________

Title: Contracting Officer Signature: _______________________

13. Other Approvals:

Robert D. Crandell

Chief, Operational Contracting Branch

Adrienne E. Strickland Chief, Contracting Division/Competition Advocate

LABORDE.ZONE

L.I.1233813938

Digitally signed by

LABORDE.ZONEL.I.1233813938

Date 2023.08.08 12 36 52 -07'00'

CRANDELL.ROBE

RT.D.1383333705

Digitally signed by

CRANDELL ROBERT.D.13833337

Date: 2023.08.08 08:27:05 -07'00'

STRICKLAND.ADRI

ENNE.E.1272391005

Digitally signed by

STRICKLAND ADRIENNE E.12723

91005 Date: 2023.08.08 15:52:27 -07'00'

8/8/23