17-R-RT01_Attachment_7.pdf

SOLICITATION NUMBER: N00173-17-R-RT01

ATTACHMENT 7

PERSONNEL QUALIFICATIONS

Researcher Level II

Education: Ph.D. in physics, electrical engineering, chemistry, or related field with a minimum of 15 years of experience in the field of radiation effects, including effects in solar cells, other semiconductor devices, and modeling the effects of the natural space radiation environment.

Experience:

1. Fifteen or more years’ experience in performing radiation effects measurements on CMOS integrated circuits and modeling the results.

2. Fifteen or more years’ experience studying basic mechanisms of radiation effects, radiation hardening, and risk mitigation, including specific experience in:

a. Monte Carlo and analytic treatments of displacement damage in semiconductors.

b. Response of HgCdTe detectors in proton and other radiation environments.

c. Single-event effects response of SiGe heterojunction bipolar transistor-based analog and

RF circuits in proton environments.

d. Low-energy proton effects on microelectronics, including test methodologies and error rate predictions based on ground-based tests

e. Analysis of particle-induced effects in focal plane arrays (including charge-coupled devices)

3. Familiarity and experience with state-of-the-art satellite technology including optical and optoelectronic technologies, charged particle effects in materials and devices, radiation dosimetry, experimental procedures to determine the response of components under laboratory conditions, and analytical techniques to assess on-orbit performance.

4. General familiarity with and working knowledge of simulation tools such as the Stopping and

Range of Ions in Matter (SRIM), Cosmic Ray Effects on Microelectronics (CREME), Space

Radiation Environment (SCREAM), Space Environment Information System (SPENVIS), Space

Radiation Environment (SPACERAD), other radiation-related software programs such as

FASTRAD and NOVICE, the AE8/AP8 model, and the AE9/AP9 model application.

Clearance: Must possess a current SECRET clearance.

Researcher I

Education: Ph.D. in physics, materials science, engineering, or related field with at least 10 years experience in the field of radiation damage including effects in solar cells, other semiconductor devices, and modeling the effects of the natural space radiation environment.

Experience:

1. Minimum ten years performing radiation effects measurements on CMOS integrated circuits.

2. Minimum ten years experience in fabricating test structures, performing total ionizing dose testing, and neutron irradiation experiments including:

a. Radiation effects in spin-transfer torque materials and devices.

b. Thermally-stimulated current measurements in SiC MOS devices.

3. Specialization in the following areas:

SOLICITATION NUMBER: N00173-17-R-RT01

ATTACHMENT 7

a. Application of nondestructive, noninvasive techniques to a wide range of materials characterization problems.

b. Experience with Auger spectroscopy, XPS, and SIMs.

4. Ten or more years experience with radiation hardening by process (RHBP) approaches and methodologies.

Clearance: Must possess a current SECRET clearance.