IFB 25-45 — Bench Top SEM, XPS System, and DualBeam FIB‑SEM.pdf

Multi-Equipment Bid — Bench Top SEM, XPS System, and FIB‑SEM Invitation for Bids (IFB) # 25-45 (General Goods)

Deadline for submissions:

07/28/2026, 3:00 pm EST

Designated Contact:

Michaela Costello Procurement Assistant

(315) 792-7293 bids@sunypoly.edu

Version 03092020 mailto:bids@sunypoly.edu

Table of Contents of CONTENTS

Summary Information Form

Overview

Background

Bidder Qualifications

Section 4.1: Minimum Bidder Qualifications

Detailed Specifications by Item

Scope of Services, Site and Timeline

Section 6.1: Delivery, Installation and Training Requirements

Section 6.2: Warranty and Support

Cost Proposal Form

Section 7.1: Travel Costs

Key Events

Section 8.1: Bidder Questions

Section 8.2: Bid Opening

Method of Award

Section 9.1: Evaluation Process

Section 9.2: Reserved Rights

Bid Submission Requirements

Section 10.1: Bid Format

................................................................................................................ Other Bid Requirements

Section 11.1: Determination of Vendor Responsibility

Section 11.2: Procurement Lobbying Act – State Finance Law §§ 139-j and 139-k

Section 11.3: Non-Collusive Bidding Certification

Section 11.4: Executive Order 162 (EO 162)

Section 11.5: Executive Order 177 (EO 177)

Section 11.6: New York State Finance Law § 139-l Certification

Section 11.7: Subcontracting

Section 11.8: General Insurance Requirements

Section 11.9: Automobile Insurance Requirements

Section 11.10: Compliance with NYS Consulting Services Reporting Requirements

General Contract Terms & Conditions

Attachment 2: New York State Human Rights Law Executive Order 177 Certification

Attachment 3: New York State Finance Law 139-l Certification

Attachment 4: Procurement Lobbying Act Certification

Attachment 5: Non-Collusive Bidding Certification

Attachment 6: Bidder References & Contract Termination History Submission Form Error! Bookmark not defined.

Attachment 7: Proposed Subcontractor Information Submission Form ......... Error! Bookmark not defined.

Attachment 8: Mandatory Requirements Submission Form ............................ Error! Bookmark not defined.

Exhibit A: State University of New York Standard Contract Clauses

Exhibit A-1: State University of New York Affirmative Action Clauses

Exhibit C: SUNY Institutions

Exhibit D, SUNY Proposal Submission Guidelines

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THIS PAGE MUST BE SIGNED AND RETURNED WITH BIDDER’S RESPONSE

IFB #: 25-45 IFB Title: Multi-Equipment Bid — Bench

Top SEM, XPS System, and FIB‑SEM IFB Release Date: 07/02/2026

Key Events Requested Submission of Questions and Requests for Clarification 07/20/2026, 3:00 pm EST Response to questions/requests for clarification issued 07/23/2026, 3:00 pm EST Bid Due Date and Time (Any bids received after the deadline will not be considered)

07/28/2026, 3:00 pm EST

Anticipated Notification of Award TBD Anticipated Contract Start Date TBD

SUNY reserves the right, in its sole discretion, to modify the above schedule. Bidders will be notified of any changes in a timely manner Contact Information

Primary Contact:

Michaela Costello Procurement Assistant

(315) 792-7293 bids@sunypoly.edu

Secondary Contact: Other Contact:

Restricted Period In accordance with the requirements of New York State Finance Law Sections 139j and 139k (“Lobbying Law”), the restricted period for this procurement is now in effect. Therefore, all communications regarding this procurement must be handled through the State University of New York’s designated contacts only.

Bidder Information Legal Business Name of Company Bidding: Bidder’s Federal Tax

Identification Number:

D/B/A – Doing Business As (if applicable): NYS Vendor ID Number:

Street Address: City/State: Zip Code:

If applicable, place an “x” in the appropriate box: (check all that apply) ☐ Small Business (if checked, provide # of employees ____) ☐ Disabled Veteran Owned Business ☐ Minority Owned Business (NYS Certified) ☐ Women Owned Business (NYS Certified)

If you are not bidding, place an “x” in the box and return this page only. ☐ We are unable to bid at this time because:

Bidders Signature: Title:

Printed Name: Date:

By signing this form, Bidder acknowledges (a) that the IFB instructions are understood; (b) that the Bidder is committed to servicing SUNY’s needs in the required time period; and (c) that all information required by this IFB has been included in Bidder’s sealed bid.

Summary Information Form

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This Invitation for Bids (IFB) is issued by the State University of New York (herein after referred to as “SUNY”) to solicit bids for three laboratory instruments: Item 1 — Bench Top Scanning Electron Microscope; Item 2 — X‑ray Photoelectron Spectroscopy (XPS) System; Item 3 — Focused Ion Beam–Scanning Electron Microscope (FIB‑SEM). Award will be made to the lowest price per item to a qualified, responsive, and responsible bidder meeting the specifications outlined in this IFB.

The results of this IFB will be used to award one or more 1‑year contracts, with the option to renew for one additional 3‑year term, to the Bidder(s) determined to be most qualified.

Section 3.1: University Background

The State University of New York (“SUNY”) is the largest comprehensive public university system in the United States, educating more than 400,000 students in more than 7,500 degree and certificate programs on 64 individual campuses with nearly 3 million alumni around the globe. Enrollments are detailed as follows:

• 13 University Centers and Doctoral Degree Granting Institutions offering academic programs through the doctoral level; each enroll between under 1,000 to over 19,000 undergraduate students;

• 13 University Colleges offering academic programs through master’s level; each enrolls between 3,700 to over 9,000 undergraduate students;

• 8 University Colleges of Technology offering academic programs through master’s level; each enroll between 1,600 and 6,000 undergraduate students; and

• 30 community colleges offering academic programs through the associate’s level; each enrolls between 1,700 to over 26,000 undergraduate students. The SUNY Research Foundation works with the academic and business leadership of campuses to support research and discovery at SUNY through efficient and skillful administration of sponsored projects and adept transfer and sharing of intellectual property for public benefit and economic growth.

SUNY is committed to reducing administrative costs, maximizing efficiencies and increasing the amount of resources allocated to academics and student services. As part of this commitment, SUNY is collaboratively sourcing and streamlining procurement efforts. Bidders doing business with SUNY will also benefit from this streamlined procurement approach, as it saves the time and effort of responding individually to separate campuses and managing multiple agreements.

Section 3.2: Project Description

These acquisitions support the Semiconductor Processing and Training Center and Biomedical Materials initiatives at SUNY Poly and will strengthen hands‑on, research‑intensive postgraduate programs while expanding advanced materials characterization capabilities.

Systems will be homogeneous with standardized software/hardware, installation services, and a written certification sign‑off verifying full operational status and functional safety devices upon installation at SUNY Poly’s Utica campus (Donavan Hall).

Overview

Background

Bidder Qualifications

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1. Minimum Bidder Qualifications

A contract will be awarded only to a responsible, responsive and qualified Bidder, in a financial position to do the work specified. Bids will be accepted only from Bidders meeting the following minimum qualifications:

• Relevant Experience: The Bidder must meet the following criteria:

o Minimum ten (10) years of experience manufacturing/supplying the relevant instrument technologies (SEM/XPS/FIB‑SEM), including beam/ion sources, detectors, stages, accessories, and associated software.

o Authorized by the OEM (if a dealer) to sell, deliver, install, and support the quoted equipment in the United States.

o Affirm you meet the required experience.

• Service Requirements:

o Professional service organization capable of on‑site installation, testing, repair, and training with factory‑certified personnel.

o Ability to provide on‑site service within five (5) business days of a service request and to honor warranty requirements.

• Compliance, Certifications, and Safety Requirements:

o Provide all relevant certifications required for installation, service, and support of the proposed solution.

o Bidder must provide all applicable U.S. safety certifications (e.g., UL/NRTL). CE‑only certification is not acceptable at SUNY.

o Bidder must provide acceptable NRTL documentation.

o Equipment must meet OSHA requirements; formal certification documents are subject to SUNY Engineering approval prior to acceptance.

• Bidder must provide a required Pass/Fail Narrative including:

o Company History;

o Executive Background;

o Capacity to meet all stated qualifications;

o Provide at least three U.S. installation references within the past five years in support of the required experience. The references should demonstrate the Bidder’s ability with projects similar in scope, size and nature of this IFB.;

o Financial stability; and o Proof of insurance required for on-site work.

• Bidder must meet all requirements set forth in the detailed specifications.

o By submitting a proposal, the bidder acknowledges and certifies that their product, service, and/or solution fully complies with every technical, functional, operational, and performance specification outlined in this solicitation. Failure to meet any specification— whether major or minor—will be grounds for disqualification.

o The issuing agency reserves the right to:

Verify compliance with all specifications Request documentation or evidence supporting compliance

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Reject any proposal that is incomplete, non‑responsive, or does not strictly meet the stated requirements o Only bidders who can demonstrate full conformance with the specifications will be considered for award.

• Identify and explain any cancelled or failed implementations of the Bidder’s proposed solution resulting in contract termination in the last five (5) years or that are pending litigation.

• All correspondence, bid documents, training/service manuals, and certifications provided in American English and United States currency.

SUNY reserves the right to contact client references to validate experience and the scope and quality of work. The Bidder is solely responsible for providing contact information for clients that are readily available to be contacted and will respond to questions. If SUNY is unable to contact a client, the Bidder will be provided one opportunity, with a deadline, to assist in obtaining cooperation from those clients that have not responded.

In response to this section complete and submit Attachment 6, Bidder Qualifications Submission Form.

Item 1 — Bench Top Scanning Electron Microscope with EDS and EBSD

System overview

This bid document outlines the technical specifications and requirements for the procurement of a Bench Top Scanning Electron Microscope (SEM) equipped with Energy Dispersive Spectroscopy (EDS) and Electron Backscatter Diffraction (EBSD) capabilities. The system shall support high-resolution imaging, compositional analysis, and crystallographic characterization for advanced materials research.

2. System Requirements

1.2.1 Electron Source and Imaging Performance

• Electron Gun Type: Schottky Field Emission Electron Gun

• Acceleration Voltage: 200 V to 30 kV

• Beam Current Range: 4 pA to ≥ 2 µA (vendor to specify available options)

• Resolution Requirements:

o ≤ 2 nm at 30 kV o ≤ 2 nm at 1 kV o 3.0 nm at 30 kV (SE) o 8.0 nm at 3 kV (SE) o 6.0 nm at 3 kV o 4.0 nm at 30 kV o ≤ 4 nm in Variable Pressure Mode o BSE resolution ≤ 3.5 nm at 10 Pa

Detailed Specifications by Item

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Imaging Capabilities

• Magnification Range: 6x to 1,000,000x

• Focus Range: 2 mm to 100 mm

• Field of View: ≥ 18 mm

Vacuum System

• Low Vacuum Mode: 2 to 100 Pa or better

• High Vacuum Mode: ≤ 7 × 10⁻4 Pa

• Pumping System: Oil-free

• Turbomolecular Drag Pump

• Accessories:

o Acoustic enclosure for vacuum pump o Overheat sensor for pump enclosure o Water chiller and compressor o Compressed nitrogen (N₂) system with pressure gauges (if required) o Room temperature management procedures for SEM operation

Detectors

• Everhart-Thornley Secondary Electron Detector

• In-lens Secondary Electron Detector

• Retractable Backscatter Electron (BSE) Detector

• Variable Pressure Secondary Electron Detector

Specimen Chamber and Stage

• Motorized 5-Axis Eucentric Stage (Computer Controlled):

o X-axis: ≥ 100 mm o Y-axis: ≥ 100 mm o Z-axis: ≥ 50 mm o Tilt: -15° to >90° o Rotation: Continuous 360°

• Sample Capacity:

o Maximum specimen diameter: 100 mm (option for 200 mm required) o Maximum sample weight: ≥ 8 kg

• Position Memory:

o Specimen location storage with repeatability ≤ 3 µm

• Cryo-stage conditions: -140oC or below

1.2.6 Chamber and Expansion Capabilities

• Infrared (IR) chamber scope for in situ viewing

• Ports for additional detectors including:

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EDS System Requirements

• Detector Type: Silicon Drift Detector (SDD)

• Energy Resolution: ≤ 133 eV at Mn Kα

• Low-Energy Performance: Capable of detecting light elements (e.g., Carbon; vendor to specify sensitivity)

• Detector Area: ≥ 25 mm²

• Collection Solid Angle: Vendor to specify

• Window Type: High transmission window

• Software: Advanced EDS analysis software included

EBSD System Requirements

• High-speed detector with ≥ 3000 patterns per second (pps)

• High-sensitivity data acquisition

• Angular resolution ≤ 0.1°

• Optimized performance at low ≤ 5 kV

• High-resolution crystallographic imaging

• Real-time, high-speed data analysis integration

• Spatial resolution ≤ 20 nm

Computer Systems and Software

• Workstations with Windows 11 OS

• X-ray analysis software (e.g., Pathfinder Alpine/Mountaineer or equivalent)

• 3D visualization, image processing, and editing software

• Joystick-based stage control

• Navigation camera

• Drag-to-zoom functionality

• Multi-dimensional stage movement controls

• Integrated IR camera

• Software upgrades included for minimum of five (5) years

Operational Features

• Fast startup and imaging capability

• User-friendly interface with automated functions

• Integrated system control for SEM, EDS, and EBSD

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3. Deliverables and Installation

• Fully installed and operational SEM system

• All specified detectors and accessories

• Software licenses and documentation

• Training for operators

• Maintenance and service documentation

• Vendors must include a site preparation document detailing space, electrical, air, and gas requirements with proposals.

• FOB Destination, inside delivery; remove all packing materials after installation.

• Building access limitation: equipment must pass through an 84" × 108" doorway.

• Installation, calibration, commissioning by OEMcertified technicians; SUNY Facilities will manage building electrical work only.

1.3.1 Warranty and Support

• Minimum 3 years full system warranty, including SEM and FIB columns, detectors, GIS, nanomanipulator, and computer.

• Quote optional extended warranty of three (3) additional years.

• Preventive maintenance visits (at least one per year during warranty).

• Local or regional service support with defined response time and availability of spare parts.

1.3.2 Options

The list of essential spares and consumables required for the trouble-free operation of the complete system and its requirement for at least 5 years should be quoted. The cost of spares/consumables prevailing on the date of bidding with shelf life should be quoted.

1.3.3 Accessories

Desk for displays, keyboards, and other computer control hardware.

1.3.4 Training and documentation

• Onsite training for:

o Basic FIBSEM operation.

o TEM lamella preparation workflows.

o EDS, EBSD, and CL operation and data analysis.

• Comprehensive user manuals and application notes.

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• Optional advanced training visits for complex semiconductor workflows.

1.3.5 Mandatory accessories (to be included in the basic quote):

• Closedloop water chiller (if required).

• Uninterruptible Power Supply (UPS) of suitable wattage on-line UPS with 3-phase input (or as appropriate) and single-phase output with 3 hours battery back-up

• Vibrationisolated table or platform if recommended by vendor.

• One full set of vacuum pumps, controllers, and cables; necessary gases/vacuum fittings for Ar, Arcluster and Raman purge (if needed).

Item 2 — X‑ray Photoelectron Spectroscopy (XPS) System Xray Photoelectron Spectroscopy (XPS) System with Depth Profiling, Imaging and Optional Raman

1. System Overview and Applications

1.1 The system shall be a fully integrated, stateoftheart Xray Photoelectron Spectroscopy (XPS) instrument, capable of quantitative chemical‐state analysis of solid materials (metals, semiconductors, oxides, polymers, glasses, ceramics, 2D materials, battery materials, catalysts, etc.).

1.2 The system shall support:

• Highresolution XPS (survey and narrow scans).

• XPS imaging / mapping with microfocused beam.

• Sputter depth profiling (monoatomic and gascluster Ar).

• Angleresolved XPS (ARXPS) for nondestructive depth profiling.

• Optional Ultraviolet Photoelectron Spectroscopy (UPS), Auger Electron Spectroscopy

(AES) and Inverse Photoemission Spectroscopy (IPS) upgrade paths (to be specified separately by vendor).

1.3 The system should optionally support an integrated or directly correlative confocal Raman spectrometry capability for correlative XPS–Raman analysis on the same platform, enabling XPSRaman measurements on the same sample area, including common sample stage, coregistration and softwarelevel correlation of data.

1.4 The complete system (XPS + Raman + vacuum + accessories) shall be suitable for installation in a materials characterization facility for multiuser operation with a minimum expected lifetime of 10 years. Automation, if available, and an intuitive software interface, should support both expert and novice users. Building access limitation: equipment must pass through an 84" × 108" doorway.

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2. Vacuum System and Chambers

2.1 The system shall comprise of at least three differentially pumped chambers:

• Analysis chamber (XPS/Raman analysis).

• Loadlock chamber for rapid sample introduction.

• Optional: Sample preparation / sputter chamber (may be integrated with analysis chamber if performance is not compromised).

2.2 Insertion chamber

• Must be provided with a camera that provides a global view of sample holder.

2.3 Analysis chamber

• UHV stainless steel chamber, μmetal or equivalent magnetic shielding.

• Ultimate base pressure ≤ 5 × 10⁻¹⁰ mbar after bakeout (or better).

• At least 3 optical viewports and 5 or more spare ports for future expansion.

• The chamber must have a high-resolution, color CCD optical camera with digital zoom capability and proper light source illumination to view the analysis position on the sample.

2.4 Pumping

• Dedicated turbomolecular pump(s) with oilfree backing pumps for each chamber.

• Ion getter / titanium sublimation pump (or equivalent) on analysis chamber to reach specified UHV pressure.

• Fully interlocked electropneumatic gate valves and pressure gauges (Pirani + cold cathode / ion gauge) on each chamber.

2.5 Loadlock

• Base pressure ≤ 5 × 10⁻⁷ mbar (or better) with turbo + diaphragm/scroll pump.

• Typical pumpdown from atmosphere to transfer pressure in ≤ 15 minutes for a full sample holder.

2.6 All vacuum controls shall be softwareintegrated with fully automatic pumpdown, venting and interlocks for power failure, cooling failure and overpressure conditions.

3. Sample Stage and Manipulator

3.1 5axis motorized manipulator in analysis chamber:

• X, Y travel: ≥ 50 mm each; Z travel: ≥ 12 mm; polar tilt: at least −90° to +90°; azimuthal rotation ≥ 360°.

• Positioning resolution ≤ 1 μm in X/Y/Z.

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3.2 Sample handling:

• Sample capacity: ability to load multiple samples per pumpdown (e.g., ≥ 4–6 standard mounts) to enable efficient batch work.

• Sample size: capability to mount small pieces and substrates up to at least 50 mm wafers or equivalent; vendor shall state maximum usable size and thickness.

• Dedicated sample holders for powder, fibers and angle dependent studies should be provided.

• Integrated charge compensation system providing stable, artifactfree spectra on insulating materials.

• Automated transfer from loadlock to analysis chamber without breaking UHV is a plus, but manual transfer will be considered as well.

3.3 Heating / cooling (minimum):

• Resistive sample heating up to at least 800 °C at the sample surface with thermocouple feedback.

• Provision for future integration of a cooling module / cryostage (e.g. down to −120 °C or better).

3.4 Stage automation:

• Automatic sample height (Z) optimization using optical imaging and analyzer feedback.

• Softwaredefined, sequential measurement of userselected positions (multipoint measurements, mapping, and depth profiling scripts).

4. Xray Source(s)

4.1 The system shall be equipped with a highbrightness, monochromated Al Kα Xray source (hν ≈ 1486.6 eV):

• Energy resolution (source contribution) ≤ 0.45 eV on Ag 3d₅/₂ or better.

• Xray power ≥ 200 W with efficient water cooling and capability for longterm operation.

4.2 Dualanode nonmonochromatic source (Al/Mg) shall be provided or the vendor shall demonstrate equivalent dualenergy capability (Al Kα + alternative energy) for charge compensation and depth profiling optimization.

4.3 Xray spot size and imaging:

• Continuously selectable spot / analysis area from large area (≥ 500–1000 μm) down to ≤ 50 μm equivalent diameter.

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• Capability for parallel or scanned XPS imaging/mapping with spatial resolution ≤ 10 μm;

systems offering ≤ 3–5 μm lateral resolution will be preferred.

4.4 The system shall allow automatic Xray spot size calibration and alignment via internal software routines.

4.5 Xray intensity stability adequate for long acquisitions; vendor shall specify typical intensity drift over 8 hours.

5. UPS Source

5.1 Ultraviolet Photoelectron Spectroscopy: UV source (HeI and HeII) for Ultraviolet photoelectron spectroscopy.

6. AES Auger Electron Source

6.1 Auger Electron spectroscopy: 5keVor better Auger electron source with one micron or less electron beam size with secondary electron detector for AES studies.

7. Electron Analyzer and Detector

7.1 Hemispherical analyzer:

• Fully electrostatic hemispherical analyzer with mean radius ≥ 125–150 mm.

• Energy range ≥ 0–3000 eV or better.

• Energy resolution (analyzer contribution) ≤ 0.25 eV at a pass energy suitable for highresolution XPS; combined system resolution (source + analyzer) shall yield FWHM of Ag 3d₅/₂ ≤ 0.6–0.8 eV in highresolution mode.

• Pass energy range: 1–200 eV or better, continuously variable, with multiple standard values (e.g. 5, 10, 20, 40, 80, 160 eV).

• Lens system supporting spectroscopy, angleresolved measurements, and parallel imaging modes.

7.2 Detector:

• Multichannel detector (e.g. Delay Line Detector / MCP–phosphor–CCD / multichanneltron) with at least 128 energy channels in parallel.

• Maximum linear count rate ≥ 1–2 Mcps; dark count ≤ 10 cps.

• Variable detector voltage; fully controlled from the main acquisition software.

7.3 Modes of operation shall include fixed analyzer transmission (FAT), fixed retarding ratio (FRR), fixed kinetic energy and detectorvoltage scan modes.

7.4 Sensitivity:

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XPS sensitivity as demonstrated using Au (4f7/2) and Ag 3d5/2 peak performance shown in the table below is required to ensure a viable selected area and large area XPS capability.

Mandatory sensitivity for selected area analysis

Analysis size (diameter)

Resolution (FWHM of Ag 3d5/2 peak)

≥ 75kcps Small area (≤ 30µm) ≤ 1.00 eV

≥ 250 kcps ≥ 2 Mcps

Large area

100 x 1400 µm Large area

≤ 0.60 eV ≤ 1.00 eV

8. Charge Neutralization

8.1 The system shall include an integrated, softwarecontrolled charge neutralization system (electron and/or lowenergy ion flood) suitable for highly insulating substrates, polymers and oxides.

8.2 Operation shall be largely automated with minimal manual parameter tuning, including:

• Automatic optimization of neutralization conditions.

• Stability sufficient to record highresolution spectra on insulating samples with minimal peak shifts or broadening.

8.3 Vendors shall provide documentary evidence (application notes or publications) for successful measurements on insulating reference materials with reported count rates and FWHM values. For example, the capability of neutralization should be demonstrated on polyethelene terephthalate (PET) with FWHM < 0.85 eV for the O-C=O peak in the carbon 1s spectrum with a minimum sensitivity of ≥ 10 kcps.

9. Ion Sputtering and Depth Profiling

9.1 A highperformance Ar⁺ ion sputter gun shall be supplied for depth profiling and surface cleaning:

• Energy range: 0.2–4 keV or better, continuously variable.

• Beam current sufficient for reasonable sputter rates on metals and oxides (≥ 5–10 μA at the sample or equivalent demonstrated performance).

9.2 Gas cluster ion beam (GCIB) capability:

• Ar cluster source with adjustable cluster size and energy per atom (1–80 eV/atom or better) to enable gentle sputtering of polymers/organics and hybrid stacks.

9.3 Depth profiling modes:

• Fully automated, softwarecontrolled sputter–acquire cycles with userdefined layers and acquisition conditions.

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• Ability to perform multipoint and/or selectedarea depth profiling on and off specific features (e.g. inclusions, devices) in “selectedarea mode”.

• Capability for compucentric depth profiling (beam stays on same feature during rotation/tilt).

9.4 Vendor shall provide application notes showing depth profiles on multilayer stacks containing both conducting and insulating layers, using monoatomic and cluster mode.

10. XPS Imaging and Mapping

10.1 The instrument shall support XPS imaging/mapping with:

• Spatial resolution ≤ 20 μm (required); ≤ 5–10 μm (preferred) in at least one imaging mode.

• Chemical state mapping capability (e.g. maps of individual peak components).

10.2 Imaging shall be possible over a fieldofview of at least 500 μm × 500 μm, with userselectable pixel dimensions and dwell times.

10.3 Optical imaging:

• Highresolution optical microscope integrated into loadlock and analysis chamber with zoom capability and proper light source illumination to view the analysis position on the sample.

• Ability to overlay optical images with XPS analysis areas; selection of analysis positions via mouse click on the optical image.

11. Optional Raman Spectrometer

11.1 A confocal Raman spectrometer shall be supplied and rigidly integrated with the XPS system for correlative analysis:

• Excitation wavelengths: at least one visible laser (e.g. 532 nm or 633 nm); duallaser configurations (e.g. 532 + 785 nm) are preferred.

• Spectral range: approximately 100–3500 cm⁻¹ or better, with spectral resolution ≤ 2 cm⁻¹.

11.2 Microscope and stage:

• Motorized XYZ stage sharing the same coordinate system as the XPS stage, or an equivalent transferable coordinate registration scheme.

• Lateral optical resolution ≤ 1 μm (using highNA objectives).

11.3 Correlative XPS–Raman capability:

• Softwareassisted registration between XPS analysis spots and Raman mapping areas.

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• Ability to define a feature optically, acquire Raman spectra/maps, and then acquire XPS spectra/depth profiles on the same region (and vice versa).

11.4 Raman data system shall include:

• Standard Raman spectral libraries and fitting/peakdeconvolution tools.

• Cosmicray removal, baseline correction, mapping and 3D visualization.

12. Software, Automation and Data Handling

12.1 Unified control software shall provide full control of:

• Xray sources, analyzer, detector(s), stage, charge neutralizer, sputter ion/cluster gun, vacuum system.

• Raman spectrometer and microscope (either integrated or via tightly coupled software).

12.2 Measurement automation:

• Automated sequences for survey scans, highresolution scans, depth profiles, ARXPS, UPS, AES and imaging.

• Automatic sample height alignment and focus based on optical or XPS feedback.

• Batch/multisample measurement scheduling for unattended operation.

12.3 Data analysis (XPS):

• Peak fitting with advanced background models (Shirley, Tougaard, etc.), constraints, and sensitivity factor–based quantification.

• Builtin XPS database and relative sensitivity factor (RSF) library for Al Kα (and other relevant sources).

• Tools for depth profile reconstruction and thickness estimation.

12.4 Software licenses:

• At least five (5) floating or nodelocked licenses for XPS data analysis.

• At least two (2) licenses for Raman data analysis.

12.5 Data export in standard formats (e.g. ASCII/CSV, VAMAS, SPC) and automated report generation (PDF/Word) including acquisition parameters and analysis results.

13. Performance and Acceptance Criteria

13.1 XPS performance (to be demonstrated on site):

• Ag 3d₅/₂ peak FWHM ≤ 0.8 eV (monochromated Al Kα, highresolution setting).

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• S/N ratio and count rate consistent with manufacturer specifications on Cu/Ag/Au standards; vendor shall specify minimum cps for defined apertures/spots and demonstrate at installation.

13.2 Energy scale:

• Bindingenergy accuracy ≤ ±0.1 eV and linearity verified on Au 4f, Ag 3d, Cu 2p peaks.

13.3 Imaging:

• Demonstration of XPS chemical images with spatial resolution ≤ 20 μm on a suitable patterned reference sample.

13.4 Depth profiling:

• Demonstrated depth profile of a standard multilayer sample (metal/oxide or equivalent) showing correct layer sequence and composition, with monoatomic and cluster sputtering modes.

13.5 Raman:

• Demonstration of Raman spectra of standard materials (e.g. Si, graphene, reference polymer) with specified spectral resolution and S/N.

• Demonstration of spatial coregistration between XPS and Raman on a patterned test sample.

13.6 All above performance parameters shall be verified during installation and recorded in an installation/commissioning report countersigned by the user and vendor’s engineer.

Noncompliance shall allow the purchaser to reject the system or demand corrective actions at no additional cost.

14. Installation, Accessories, Training, Warranty and Service

14.1 Pre installation requirement

• Complete technical details of pre-installation requirements should be furnished along with the technical bid.

14.2 Installation, and Commissioning

• Installation, complete interfacing of the system with its subsystems, and commissioning is to be carried out by the vendor’s factory-trained engineers, followed by a demonstration of the system’s performance.

14.3 Mandatory accessories (to be included in the basic quote):

• Closedloop water chiller (if required).

• Uninterruptible Power Supply (UPS) of suitable wattage on-line UPS with 3-phase input (or as appropriate) and single-phase output with 3 hours battery back-up

• Vibrationisolated table or platform if recommended by vendor.

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14.4 Standards and consumables:

• Reference samples (Au, Ag, Cu) for calibration; at least two each.

• Initial set of filaments, Xray source components, iongun parts, and Raman optics/filters sufficient for at least three (3) years of normal usage.

Ex.:

• X-ray anode kit, x 3

• Emitter kit, x 3

• Charge neutralization filament kit, x 3

• Depth profiling Ion gun filament kit, x 3

• Channel plate kit, x 3

• Sublimation pump filament kit, x 3

• Vacuum seal set, x 3

• Silica tubes etc.

14.5 Training:

• Onsite training for operators and technical staff for a minimum of 5 working days, covering operation, safety, routine maintenance and data analysis (XPS, UPS, AES and Raman).

14.6 Warranty and service:

• Comprehensive onsite warranty for a minimum of three (3) years on the complete system (XPS, Raman, vacuum, electronics, software) from the date of successful installation.

• Vendors shall quote optional comprehensive AMC/CMC prices for an additional two (2) years beyond the warranty (not counted toward technical evaluation but must be stated).

• Vendor must confirm the availability of factorytrained service engineers within the country/region and commit to maximum response time (e.g. ≤ 5 working days).

14.7 Manuals:

• A complete instruction manual in English in electronic version must accompany the equipment. Description of all the main functions and operations of that equipment (XPS) must be included in the manual.

1.

Item 3 — FIB‑SEM with EDS and EBSD FIBSEM with EDS, and EBSD

1. System overview

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The offered system shall be a fully integrated dualbeam Focused Ion Beam–Scanning Electron Microscope (FIBSEM) suitable for advanced semiconductor failure analysis, crosssectioning, TEM lamella preparation, and analytical characterization (EDS, EBSD).

• The SEM and FIB columns shall be mounted in a fixed, optimized geometry allowing simultaneous imaging and milling of the same site without realignment.

• The system shall support highresolution imaging, precise ion milling, and automated workflows for crosssections and TEM lamellae on semiconductor devices and packaged components.

2. Electron column (SEM) – minimum specifications

• Electron optics must be capable of operating in both immersion and field free modes.

• Externally controllable beam blanking capable of at least 5 MHz must be included

2.1 Electron source

• Field emission gun (FEG), Schottky type or equivalent.

• Accelerating voltage continuously adjustable from 200 V to at least 30 kV.

• Probe current range from <1 pA up to at least 100 nA (or higher), with stable emission for long analytical acquisitions (EDS/EBSD).

2.2 SEM resolution

Resolution values to be guaranteed at specified working distances in highvacuum mode.

• Secondary electron (SE) resolution at eucentric working distance:

o ≤ 1.0 nm at 15–30 kV.

o ≤ 1.5–3.0 nm at 1 kV.

• Spatial resolution better than 0.4 nm in STEM mode

• Backscattered electron (BSE) resolution suitable for materials contrast at 5–20 kV.

2.3 Detectors (SEM)

The system shall be equipped with at least the following SEM detectors:

• Inlens / throughlens SE detector for highresolution surface imaging. Detectors that can be configured to simultaneously collect electrons with an adjustable energy distribution between the detectors.

• Conventional EverhartThornley SE detector.

• Variable Pressure Secondary Electron detector.

• Retractable or fixed solidangleoptimized BSE detector for materials contrast and EBSD support.

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• Provisions (ports, geometry, electronics) to accommodate EDS, and EBSD detectors simultaneously without collision.

2.4 Imaging modes

• Highvacuum imaging mode as standard, suitable for semiconductor samples.

• Variable scan speed and integration modes (fast survey to slow highresolution scans). Scanning system images must exceed 6 megapixels with a dwell time range including at least 50 ns to 10 µs

• Autofocus and autostigmatism functions.

• Ability to perform lowkV imaging (<1 kV) for surfacesensitive inspection of devices.

3. Ion column (FIB) – minimum specifications

3.1 Ion source and energy

• Focused ion beam column with:

o Ga liquid metal ion source (LMIS) (or plasma FIB with comparable resolution if offered).

o Ion acceleration voltage up to 30 kV (or higher).

o Ion beam current range from approximately 1 pA (for polishing and fine milling) to at least 60 nA (for rapid bulk removal).

o Source lifetime must be guaranteed to exceed 1000 hours

3.2 FIB imaging and milling performance

• FIB imaging resolution:

o ≤ 5 nm at 30 kV (to be specified and guaranteed).

• Fully integrated pattern generator enabling:

o Arbitrary 2D patterns (boxes, lines, polygons).

o Dose control, dwell time and pattern overlap settings.

o Storage and reuse of milling patterns and recipes.

3.3 TEM lamella preparation capability

The system shall support complete insitu TEM lamella preparation workflows:

• Milling of trenches and extraction sites for TEM lamellae.

• Thinning lamellae to <100 nm with lowkV finishing (e.g., 2–5 kV) to minimize damage layers.

• Automated or semiautomated routines for standardized lamella workflows.

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• Scanning system images must exceed 6 megapixels with a dwell time range including at least 50 ns to 10 µs

4. Analytical detectors and accessories

4.1 In-chamber ion detector

4.1.1 Function and Geometry

• Detects secondary ions generated by the primary ion beam (Ga⁺, Xe⁺, etc.), often combined with secondary electron detection in the same housing (ICEtype detector).

• Inchamber (nearchamber wall) location with a line of sight to the interaction volume at the eucentric point; often mounted below or beside the ion column so as not to obstruct SEM detectors.

• Geometry optimized for high collection efficiency at typical FIB incidence angles (e.g., 52–55° between ion and electron columns).

4.1.2 Signal Type and Performance

• Capable of detecting:

o Positive and/or negative secondary ions from the sample (for ioncontrast imaging, SIMS prealignment, total ion current).

o Often also secondary electrons in “mixed” mode (ion conversion + electron).

• Typical lateral resolution in ioninduced imaging:

o For the primary FIB itself, ~3–7 nm probe at 30 kV; practical ioninduced image resolution ~10–20 nm depending on conditions.

• Countrate capability high enough for live imaging; commercial ICE/ICD detectors are designed for continuous operation at FIB currents from pA to tens of nA without saturation.

4.1.3 Detector Technology

• Detection element: channeltron / microchannel plate (MCP) / scintillator–PMT combination for ion conversion; sometimes integrated into a hybrid SE/SI detector head.

• High collection solid angle via shaped electrode or conversion plate to maximize secondary ion extraction efficiency (e.g., >40% transmission in integrated SIMS systems).

• Fast response suitable for line rates used in FIB imaging and for timeresolved or TOFSIMS gating when combined with appropriate electronics.

4.1.4 Biasing and Energy Range

• Adjustable bias voltages on conversion electrode / front grid to attract and accelerate lowenergy secondary ions (a few eV up to ~50–100 eV).

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• Compatible with primary ion energies from ~500 eV to 30 keV and FIB probe currents from ~1–2 pA up to tens of nA (e.g., 65 nA on a modern Ga FIB).

4.1.5. Integration and Control

• Fully integrated into the FIBSEM control software: selectable in the detector list, with adjustable gain, filtering and contrast/brightness.

• Must not interfere with standard SEM detectors (SE, BSE, inlens) or gas injection systems; physical design and mounting must allow simultaneous use with other detectors and accessories.

4.2 EDS (EnergyDispersive Xray Spectroscopy)

Required:

• Silicon drift detector (SDD) with:

o Energy resolution ≤ 130 eV at Mn Kα.

o Sufficient active area and solid angle (at least 100 mm²) to achieve high count rates at short working distances.

• The EDS control system must offer scan control for mapping, including drift correction during mapping, and map stitching via stage moves controlled by the EDS software package. Additionally, the EDS software package must provide spectral analysis features including:

o Peak identification, quantification.

o Spectrum imaging with offline quantification (kfactor or standardbased).

o Point and area analysis.

o Line scans and elemental mapping.

o Data and image exporting to formats that must include a non-proprietary format

(e.g. HDF5, text, JPG, TIFF, PNG, etc).

SUNY Poly anticipates that vendors will meet this requirement with a 3rd party analytical detector, but other solutions may be acceptable. For 3rd party detectors, the

EDS system must include a dedicated control PC

4.3 EBSD (Electron Backscatter Diffraction)

Required:

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• High-speed detector with ≥ 3000 patterns per second (pps)

• High-sensitivity data acquisition

• Angular resolution ≤ 0.1°

• Optimized performance at low ≤ 5 kV

• High-resolution crystallographic imaging

• Real-time, high-speed data analysis integration

• Spatial resolution ≤ 20 nm

• EBSD camera system compatible with the FIBSEM geometry:

o Pattern resolution: ≥ 640×480 pixels (or equivalent).

o Pattern acquisition rates of at least several hundred patterns per second for routine mapping.

• EBSD software with:

o Phase identification, orientation mapping, inverse pole figure maps.

o Grain size and texture analysis.

o Integration with stage control for automated area scans.

4.4 Insertable segmented STEM detector with at least 4 annular segments (BF, DF1, DF2, HAADF). Additional value will be given for systems that offer more segments and additional control of the how the segments are grouped into imaging signals.

• Pixelated STEM detector: SUNY Poly anticipates vendors offering a TimePix based detector, but other options can be proposed. The detector must be at least 256 × 256 pixels, be capable of operating in event mode (e.g. counting individual electron hits) with energy and position information for each event being recorded. The detector must tolerate 30 kV direct beam electrons, although probe current can be limited within the specified probe current range specified above.

5. Stage, geometry, and chamber

5.1 Sample stage

• Fully motorized 5axis eucentric stage: X, Y, Z, rotation, tilt.

• X–Y travel: minimum ± 25 mm or larger to accommodate multiple samples. Larger travel will be preferred.

• Z travel: minimum 20 mm

• Continuous 360 deg rotation

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• Tilt range:

o At least −10° to +60° for standard FIB and SEM operation.

o Capability to reach ≥70° tilt for EBSD measurements while maintaining eucentricity.

• Eucentric height maintained during tilt such that the beamsample intersection remains fixed for FIB and SEM.

• All axes must be motorized and provide compucentric rotation

5.2 STEM holder

The system must provide a double-tilt STEM holder to enable on zone axis measurements of samples. The double-tilt solution must:

• Be compatible with included STEM and pixelated STEM detectors

• Be compatible with a custom Direct Electron EBSD/TKD camera system

• Have both tilt axes perpendicular to the electron beam optic axis

• Provide at least ±5° tilt in both directions during STEM imaging at eucentric working distance.

Additional value will be given to systems that allow greater than 180° of “β” tilt to enable thinning from both sides while preserving the ability to see both sides of the lamella and perform STEM measurements.

5.3 Chamber

• Chamber dimensions sufficient to accommodate:

o FIB column, SEM column, EDS detector, EBSD camera, nanomanipulator, and multiline GIS without mechanical interference.

• Multiple specimen ports and feedthroughs for detectors and insitu devices.

• Provision for a loadlock (or integrated loadlock) to enable rapid sample exchange.

The vendor will provide pricing for optional load-lock and associated hardware that enables the sample loading, transfer and unloading with the load-lock.

• Sample Navigation – The system must include an in-situ navigation system. This requirement can be met with an in-chamber optical camera image with calibratable positions, or by tiling very low magnification SEM images. The sample navigation system must be an automatic option when loading a sample from the load lock and take less than 90 s to provide an overview of the entire 50 mm × 50 mm sample area.

• Chamber Camera – System must include a chamber camera to monitor positioning of in-chamber components during operation.

• Charge Neutralizer – Additional value will be given to vendors offering an electron flood gun for charge neutralization during milling operations of insulating samples.

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6. Sample preparation – GIS, nanomanipulator, TEM lamella

6.1 Gas Injection System (GIS)

Required:

• At least two independent GIS lines, with precursor reservoirs and computercontrolled delivery:

o Metal deposition precursor (e.g., Pt or W) for protective caps and electrical connections.

o Additional precursor (e.g., C, SiO₂ or etch gas such as XeF₂) for insulator protection or selective etching.

• Precise control of gas flux and injection positioning; full integration with pattern generator for localized deposition and etching.

6.2 Insitu nanomanipulator

Required:

• Piezodriven nanomanipulator (e.g., Omniprobetype) mounted in the chamber, must provide motorized control in X, Y, Z, and rotation with the frame of reference of the translation axis being configurable (e.g. relative to the stage at the current stage tilt).

• Capability to:

o Grasp and lift FIBprepared TEM lamellae.

o Attach lamellae to TEM grids using GIS metal deposition.

o Support repeated liftout operations with high precision.

Manipulator needle exchanges and position calibrations must be able to be performed by SUNY Poly staff. Any items needed for SUNY Poly staff to perform the exchange must be included.

6.3 Crosssectioning and sitespecific prep

• Software tools for defining crosssection regions and controlling milling patterns.

• Ability to create sitespecific crosssections in metals, dielectrics, and multilayer stacks with minimal curtaining.

7. Computer and Monitors The system must include one desktop computer and dual monitors with the following minimal characteristics:

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• Computer OS - Windows 11, 64-bit, Intel(R) i7-13700/K/KF CPU or compatible, CPU f >3.7GHz, RAM 32 GB, Graphics (6GB/8GB) or compatible, >3 x USB 2.0, 2TB HDD.

DVD-RW unit, USB Mouse, USB Keyboard must be included.

• Monitor, 27 inches or larger, GUI 1920 x 1080 or better for system control and image processing.

8. Software, automation, and 3D capability

8.1 Integrated control software

• Unified software environment controlling SEM, FIB, stage, detectors (EDS, EBSD), GIS, and nanomanipulator.

• Recipebased automation for:

o The automation system must allow customization of required parameters (e.g.

target lamella size, deposition parameters for protection and attachments, milling parameters for bulk trenching, release cutting, and thinning. These parameters must be able to be saved into a customized recipe.

o Standard TEM lamella preparation steps (trenching, liftout, thinning, polishing).

The system must be capable of performing automatic lift-out and thinning of top-down samples to a final thickness below 100 nm. This includes electron and ion deposited protection, bulk trenching, release cutting (e.g. J or U cut), cleanup, lift-out, grid attach, high-kV thinning, and low kV polishing (down to 1 kV).

o Standard crosssection procedures.

o FIB and SEM alignments – The automation system must be capable of performing

“tune up” alignments of the FIB column without user intervention.

o Manipulator needle conditioning – The automation system must include a fully automatic procedure for shaping the manipulator needle to a consistent state compatible with automation procedures including computer vision needle position recognition.

• Userdefinable macros or scripting for custom workflows.

8.2 Imaging and correction features

• Autofocus, autostigmation, and automatic brightness/contrast.

• Drift correction and frame averaging for long acquisitions (EDS/EBSD/CL mapping).

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• Multisignal imaging (SE/BSE/CL overlay) and image registration tools.

8.3 3D and sliceandview

• Automated sliceandview (serial sectioning) for 3D FIBSEM:

o Serial Sectioning for Volumetric Rendering – The system must include software functionality to allow serial sectioning using alternating FIB milling and SEM imaging. This feature must include image registration fiducials and allow users to collect multiple detectors. Additionally, the system must allow integration of EDS x-ray signals into 3D reconstructions.

o Control of milling and imaging sequence.

o Storage of image stacks and metadata.

• Export of image stacks in standard formats compatible with common 3D reconstruction software.

9. Vacuum, stability, and environment

9.1 Vacuum system

The system must be equipped with an automatically controlled vacuum system that includes control of the analysis chamber.

• Highvacuum SEM mode with ultimate pressure sufficient for FEG operation. Vendor to specify the base vacuum pressure of the chamber.

• Hybrid, turbomolecular – mechanical dry pump system sized for rapid (≤ 3 min) pumpdown.

• Optional ion pump / getter pump support for improved base pressure.

9.2 Stability

• Beam and stage stability suitable for overnight milling and long EDS/EBSD/CL acquisitions without significant drift.

• Vendor to provide:

o Environmental specifications (temperature stability, vibration, acoustic limits).

o Siteprep guidelines (floor loading, EMI, etc.).

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10. Service, warranty, options, accessories and training

10.1 Delivery and Installation

• Vendors must include a site preparation document detailing space, electrical, air, and gas requirements with proposals.

• FOB Destination, inside delivery; remove all packing materials after installation.

• Building access limitation: equipment must pass through an 84" × 108" doorway.

• Installation, calibration, commissioning by OEMcertified technicians; SUNY Facilities will manage building electrical work only.

10.2 Warranty and Support

• Minimum 3 years full system warranty, including SEM and FIB columns, detectors, GIS, nanomanipulator, and computer.

• Quote optional extended warranty of three (3) additional years.

• Preventive maintenance visits (at least one per year during warranty).

• Local or regional service support with defined response time and availability of spare parts.

10.3 Options

The list of essential spares and consumables required for the trouble-free operation of the complete system and its requirement for at least 5 years should be quoted. The cost of spares/consumables prevailing on the date of bidding with shelf life should be quoted.

10.4 Accessories

Desk for displays, keyboards, and other computer control hardware.

10.5 Training and documentation

• Onsite training for:

o Basic FIBSEM operation.

o TEM lamella preparation workflows.

o EDS, EBSD, and CL operation and data analysis.

• Comprehensive user manuals and application notes.

• Optional advanced training visits for complex semiconductor workflows.

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10.6 Mandatory accessories (to be included in the basic quote):