This $199,997 project grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) to Texas State University aims to address challenges in integrating diamond with gallium oxide (Ga2O3) for high-performance electronic device applications. The key objectives are to: Develop a novel approach to grow uniform, high-quality diamond films directly on Ga2O3 substrates by incorporating an ultra-thin quenched carbon interlayer to mitigate thermal and lattice mismatch issues....
This National Science Foundation (NSF) Technology, Innovation, and Partnerships (CFDA 47.084) Project Grant award of $275,000 to United Semiconductors, LLC supports the development of two critical hardware components for in-space manufacturing of advanced semiconductor materials: A Universal Crystal Growth Capsule designed to leverage microgravity conditions during crystal growth, enabling high-throughput production of high-purity semiconductor crystals. A novel Wafer Dicing Tool to achieve...
This Project Grant award from the National Science Foundation (NSF) Engineering program (CFDA 47.041) provides $249,969 to the University of Delaware to enhance the performance of gallium nitride (GaN)-on-silicon high electron mobility transistor technology for high frequency and high power electronics applications. The key research activities aim to develop a novel self-aligned T-shaped gate fabrication process to improve the radio frequency and power performance of GaN-on-silicon devices,...
The National Science Foundation (NSF) awarded a $359,971 project grant to the University of Oklahoma to research methods for enhancing heat transfer across the interface between diamond substrates and gallium nitride (GaN) electronic devices. The project, funded under NSF's Engineering program (CFDA 47.041), aims to explore how evanescent electric fields can be leveraged to improve acoustic phonon transmission and thermal conductance at these critical interfaces. This work seeks to enable more...
This $414,655 National Science Foundation (NSF) Engineering Program (CFDA 47.041) project grant, awarded on September 15, 2024, aims to address emerging challenges in the field of heterogeneous integration (HI) in semiconductor packaging. The project will develop rapid 3D metrology techniques and incorporate machine learning to accelerate the detection of fabrication defects in semiconductor packages, thereby improving the reliability and performance of electronic packaging. The technical...
This Project Grant from the National Science Foundation's Division of Electrical, Communications and Cyber Systems provides $408,546 to Washington State University from October 1, 2021 to September 30, 2024. The funding supports fundamental investigation on flexible high temperature devices under the NSF's Engineering program (CFDA #47.041). This program seeks to improve quality of life and economic strength by fostering innovation and excellence in engineering research. Specifically, the...
This National Science Foundation (NSF) Engineering (CFDA 47.041) Project Grant award, totaling $303,103, aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The lead institution, University of Texas at Dallas (UTD), will collaborate on this 3-year project to address existing challenges in ultra-wide bandgap semiconductor device design, materials properties, and packaging techniques. The key...
Scdevice LLC, a for-profit organization, received a $275,000 Project Grant from the National Science Foundation (NSF) Technology, Innovation, and Partnerships (CFDA 47.084) program to develop and demonstrate a radiation-tolerant, high-voltage silicon carbide (SiC) semiconductor device for space applications. The goal is to create a SiC junction barrier Schottky diode rated at 1200V that can withstand the high levels of radiation encountered in outer space. This effort aims to enable smaller,...
This $308,820 federal Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) to Iowa State University aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The key objectives are to (i) enable significantly efficient, smaller, and faster power switches using beta-phase gallium oxide semiconductors, (ii) address challenges at both the device and...
This federal Project Grant award of $450,115.00 from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) supports research to establish new fields in extreme environments, high-frequency sensing, and high-temperature communications. The award to The Trustees of the Stevens Institute of Technology will develop foundational high-frequency electronics for extremely high-temperature sensing and communications beyond 1,000 degrees Celsius, targeting broad industrial,...