This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...
The National Science Foundation (NSF) awarded a $359,971 project grant to the University of Oklahoma to research methods for enhancing heat transfer across the interface between diamond substrates and gallium nitride (GaN) electronic devices. The project, funded under NSF's Engineering program (CFDA 47.041), aims to explore how evanescent electric fields can be leveraged to improve acoustic phonon transmission and thermal conductance at these critical interfaces. This work seeks to enable more...
This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant of $521,938 awarded to Arizona State University (ASU) aims to advance the development of ultrawide bandgap aluminum nitride (AlN) field-effect transistors (FETs) for high-performance power electronics. The 5-year project, starting June 1, 2024, will conduct fundamental research and device engineering to address key material and device obstacles for AlN power FETs, with the goal of unlocking the full potential of AlN...
This National Science Foundation (NSF) project grant under the Engineering program (CFDA 47.041) awarded to the University of California, Santa Barbara (UCSB) aims to address challenges in developing high-performance, low-power, and energy-efficient two-dimensional semiconductor-based field-effect transistors (2DS-FETs). The $332,817 award, effective October 1, 2024 through September 30, 2027, will support research to develop novel gate-stack engineering strategies using a combination of 2D...
This $325,000 Project Grant from the National Science Foundation Division of Electrical, Communications and Cyber Systems supports collaborative research on high-frequency, high-power amplifier technology at the University of Notre Dame from September 2021 through August 2024. The research aims to develop amplifier designs based on distributed coupling of gallium nitride high electron mobility transistors through a silicon carbide substrate-integrated waveguide. Such amplifiers could enable...
The National Science Foundation awarded a $439,603 Project Grant to the University of Texas at Dallas to support research under the Engineering federal grant program (CFDA 47.041). The award will fund continued research through 2025 in collaboration with institutions in Northern Ireland and the Republic of Ireland. Specifically, the funding will support investigation of gallium oxide as a semiconductor material for power electronics applications. The research team will evaluate gallium oxide...
This $419,379 Project Grant awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) aims to develop innovative gallium nitride (GaN)-based terahertz (THz) photoconductive emitters with an optical-to-THz energy conversion efficiency approaching or exceeding 100%. The research project will focus on three core areas: (1) designing GaN photoconductive switches with high breakdown electrical fields, (2) investigating ultrafast carrier dynamics and THz generation in...
This $199,997 project grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) to Texas State University aims to address challenges in integrating diamond with gallium oxide (Ga2O3) for high-performance electronic device applications. The key objectives are to: Develop a novel approach to grow uniform, high-quality diamond films directly on Ga2O3 substrates by incorporating an ultra-thin quenched carbon interlayer to mitigate thermal and lattice mismatch issues....
This award from the National Science Foundation (NSF) Division of Electrical, Communications and Cyber Systems under the Engineering CFDA program provides $1,499,996 to the University of Wisconsin System to conduct research on developing ultra-efficient, high-voltage monolithic bidirectional transistors (MBDTs) for use in power electronics applications. The key objectives are to: 1) demonstrate the first ultra-wide bandgap (UWBG) based MBDTs; 2) enhance the performance and manufacturability of...
The National Science Foundation awarded Pseudolithic Inc. a $255,999 Project Grant under the Engineering federal grant program (CFDA 47.041) to support the Integration of Heterogeneous Device Technologies project from August 1, 2021 to April 30, 2022. Under this award, Pseudolithic Inc. will develop and integrate heterogeneous semiconductor device technologies for millimeter-wave applications. Specifically, the company will work on developing gallium nitride high electron mobility transistors...
This Project Grant award from the National Science Foundation (NSF) Engineering program (CFDA 47.041) provides $249,969 to the University of Delaware to enhance the performance of gallium nitride (GaN)-on-silicon high electron mobility transistor technology for high frequency and high power electronics applications. The key research activities aim to develop a novel self-aligned T-shaped gate fabrication process to improve the radio frequency and power performance of GaN-on-silicon devices, making them more comparable to the higher performing GaN-on-silicon carbide counterparts. The project also incorporates educational and workforce development initiatives, including new course development, internships, industry collaborations, and K-12 outreach activities focused on emerging semiconductor device technologies. The award is effective from August 15, 2023 through July 31, 2028.