This National Science Foundation (NSF) Engineering program (CFDA 47.041) Project Grant award of $303,103 to the University of Texas at Dallas (UTD) aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications.
The key objectives of this 3-year project include: (1) improving the robustness and thermal management of gallium oxide power devices by integrating dielectric and substrate materials; (2) engineering the Schottky barrier to enable high surface breakdown field, thermal stability, and low loss; and (3) mitigating defects in large-area power devices through process development. At the packaging level, the project will investigate and integrate novel high-temperature liquid dielectrics and field-dependent conductivity materials to improve electric field control within the module. This highly coupled device-packaging project will establish an electro-thermal, device-package co-design framework to maximize the potential of emerging ultra-wide bandgap power devices.