Project Grant 2619183

The National Science Foundation Division of Electrical, Communications and Cyber Systems awarded The Pennsylvania State University $400,000 on October 15, 2026, under the Engineering program (CFDA 47.041) to conduct research on suppressing active-state instability in gallium nitride (GaN) electronics for extreme environments.

The project studies a novel approach to stabilize GaN semiconductors used in power electronics, wireless communication, aerospace, and defense platforms by applying short, high-current electrical pulses that transfer momentum from electrons to defect structures while limiting unwanted heating. GaN devices operating in extreme environments experience defects that trap charge, disturb current flow, and reduce reliability; current mitigation methods rely on conservative design margins, replacement, thermal annealing, or system shutdown. The research will establish the physical basis, operating limits, and predictive modeling framework for electron wind force stimulation in GaN devices—a non-thermal mechanism for electrically programmable recovery that could extend device life without operational interruption.

The work will also develop educational content incorporating results into engineering courses, senior design projects, instructional videos, and K–12 outreach demonstrations using infrared imaging and microscopy. Graduate and undergraduate students will receive training at the intersection of semiconductor devices, reliability physics, materials science, and modeling.

Performance occurs in State College, Pennsylvania, with a period of performance through September 30, 2029. The funding is classified as a Project Grant.