This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and characterization to assess the impact on gallium nitride p-junction performance. This work aims to address current challenges in forming effective p-type doping needed for high performance gallium nitride devices. If successful, the proposed p-doping approach could enable wider adoption of vertical gallium nitride power devices and help maintain U.S. leadership in wide bandgap semiconductor technology under the NSF's Engineering grant program (CFDA 47.041). The 18-month project began October 1, 2022 with completion expected by March 31, 2024.
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