Synthesis and investigation of novel MO (s, SE, TE)2/VS2/GA2O3 2D/3D hybrid heterostructures for tunable interface engineering in next-generation electronics and optoelectronics

The National Science Foundation Office of Integrative Activities awarded Clark Atlanta University, Inc. $443,907 on September 1, 2026, for synthesis and investigation of novel MoX₂/VS₂/Ga₂O₃ 2D/3D hybrid heterostructures for tunable interface engineering in next-generation electronics and optoelectronics under the Integrative Activities program (CFDA 47.083).

The research establishes interfacial properties for electronic and optoelectronic systems by combining transition metal dichalcogenides, vanadium sulfide, and gallium oxide ultrawide bandgap semiconductors. Work focuses on controlled growth pathways for layered 2D/3D interfaces using chemical vapor deposition as the primary synthesis method to enable direct transfer to industry applications. The project includes STEM training for undergraduates through research and educational activities, curriculum development, and engagement with high school STEM students and teachers at science fairs.

Performance occurs in Atlanta, Georgia, with a period of performance from September 1, 2026, through August 31, 2029. The award is classified as a Project Grant.

Abstract

Nontechnical description the rapid growth of artificial intelligence (AI) and high-speed computing has created an urgent need for advanced materials. As electronics based on silicon approach their performance and size limits, there is a growing focus on new materials with superior charge transport and thermal stability. Two-dimensional (2D) semiconductors have shown great promise due to their unique electronic and mechanical properties. At the same time, widegap semiconductors have drawn interest for use in high power and high-speed electronics. This project brings these two promising classes of materials together. The overarching goal is to create and study heterostructures that combine 2D and widegap semiconductors. By leveraging the properties of different materials, such structures could enable control of the electronic, optical, and thermal properties for use in next generation electronics. Furthermore, IT will contribute to stem training for undergraduates via a range of research and educational activities. The PI will also enrich the curriculum by developing modules related to the project and engage with high school stem students and teachers at science fairs activities. Technical description the overarching goal of this project here is to establish interfacial properties for next-generation electronic and optoelectronic systems via a heterostructure consisting of a transition metal dischalcogenide (MOX2; x = s, SE, TE), vanadium sulfide (VS2), and the 3D ultrawide bandgap semiconductor GA2O3. This research aims to develop controlled growth pathways for layered 2D/3D interface, targeting chemical vapor deposition (CVD) as the primary synthesis method to allow for direct transfer to industry. The work focuses on the growth of VS2, which is a renowned material to alter its conductive properties based on the growth parameters and phases. The ability to tailor the electronic properties of MOX2/VS2/GA2O3 heterostructure via altering VS2 properties is explored in this project. Further, the GA2O3 is an ultrawide bandgap material, which are very important in device applications, particularly for deep ultraviolet applications. The VS2/GA2O3 interface is hypothesized to form a miniband, facilitating the charge transfer processes in the GA2O3 and improving the carrier transport efficiency. Thus, this project enables utilization of ultrawide bandgap semiconductors in highly efficient electronic and high-energy-photon detector applications. Furthermore, the study exposes many other electronic, optical, and structural properties of the materials and heterostructures, and the turnability of electronic and optical properties of the above heterostructures via systematic variation of the growth conditions, chalcogen composition, and interface configurations. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.- subawards are not planned for this award.