Project Grant 2426363

Award Date 10/1/24
Completion Date 1/31/26
Dollars Obligated $206K
Federal Grant Program
47.041
Assistance Type
Project Grant
Place of Performance
Los Angeles, CA 90024, USA
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This Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) was provided to the University of California, Los Angeles to develop a novel gallium oxide-based transistor for high-power, low-waste power conversion applications. The key objectives of this $206,457 award, with a performance period from October 1, 2024 to January 31, 2026, are to:

  1. Investigate the impact of slanted sidewalls and n-type implantation on enhancing the breakdown voltage of the e-mode β-Ga2O3 fin field-effect transistors (FinFETs).
  2. Fabricate and characterize FinFETs on both metal-organic chemical vapor deposition (MOCVD) and halide vapor phase epitaxy (HVPE) grown epitaxial structures to analyze the impact of growth technique and material quality on device performance.
  3. Study the impact of substrate thickness on the on-resistance of the FinFET devices.
  4. Develop β-(Al,Ga)2O3 sidewall regrowth and HfSiO2 dielectrics using plasma-assisted molecular beam epitaxy, and analyze their impact on electron mobility, interface trap density, and overall FinFET characteristics.

This research aims to enable efficient high-power switches in the 2,000V-20,000V voltage range, which is critical for a variety of high-power electronic applications, including distributed grid systems, industrial automation, electric vehicles, and electrical mass transit.

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