This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...
This Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) was provided to the University of California, Los Angeles to develop a novel gallium oxide-based transistor for high-power, low-waste power conversion applications. The key objectives of this $206,457 award, with a performance period from October 1, 2024 to January 31, 2026, are to: Investigate the impact of slanted sidewalls and n-type implantation on enhancing the breakdown voltage of the e-mode...
This National Science Foundation (NSF) Engineering (CFDA 47.041) Project Grant award, totaling $303,103, aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The lead institution, University of Texas at Dallas (UTD), will collaborate on this 3-year project to address existing challenges in ultra-wide bandgap semiconductor device design, materials properties, and packaging techniques. The key...
This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant, awarded to Arizona State University (ASU), aims to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs) for use in high-efficiency power converter applications. The key aspects of the proposed work include: Investigating an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of tall, high...
This $308,820 federal Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) to Iowa State University aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The key objectives are to (i) enable significantly efficient, smaller, and faster power switches using beta-phase gallium oxide semiconductors, (ii) address challenges at both the device and...
This National Science Foundation (NSF) Integrative Activities (CFDA# 47.083) Project Grant award provides $300,000 to the University of Arkansas to enhance the power density and operating temperature range of traction inverters for electric vehicles (EVs) through the use of gallium oxide-based power modules. The key objectives are to: 1) innovate power module packaging techniques to optimize thermal resistances, minimize parasitic inductances, and enhance high-temperature operation; 2) explore...
This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...
This $199,997 project grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) to Texas State University aims to address challenges in integrating diamond with gallium oxide (Ga2O3) for high-performance electronic device applications. The key objectives are to: Develop a novel approach to grow uniform, high-quality diamond films directly on Ga2O3 substrates by incorporating an ultra-thin quenched carbon interlayer to mitigate thermal and lattice mismatch issues....
The National Science Foundation awarded a $439,603 Project Grant to the University of Texas at Dallas to support research under the Engineering federal grant program (CFDA 47.041). The award will fund continued research through 2025 in collaboration with institutions in Northern Ireland and the Republic of Ireland. Specifically, the funding will support investigation of gallium oxide as a semiconductor material for power electronics applications. The research team will evaluate gallium oxide...
The National Science Foundation Division of Electrical, Communications and Cyber Systems awarded Virginia Polytechnic Institute & State University a $368,711 Project Grant to develop high-temperature ultra-wide bandgap gallium oxide power modules. With a completion date of April 30, 2024, this award will support research under the NSF's Engineering program (CFDA 47.041) to foster innovation in engineering research. Specifically, Virginia Tech will work to improve the quality of power...
This Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) will provide $200,000 to the University of Massachusetts Lowell to advance the materials and processing foundations necessary to enable the next generation of high-voltage power diodes based on gallium oxide.
The key objectives of this 2-year project are to: 1) establish a scalable low-pressure chemical vapor deposition (LPCVD) growth platform for high-quality beta-gallium oxide drift layers, 2) develop an in-situ, plasma-damage free etching method to fabricate high-aspect-ratio vertical trench structures, and 3) demonstrate high-performance vertical trench Schottky barrier diodes integrating the optimized grown and etched materials. This research aims to address critical challenges in synthesizing, processing, and translating gallium oxide into functional, high-voltage power electronic devices to enable more compact, robust, and energy-efficient power systems.