This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include optimizing doped gallium oxide layers for high breakdown voltages grown via metalorganic chemical vapor deposition. The team will design, fabricate, and test gallium oxide metal-oxide-semiconductor field-effect transistors integrated onto high thermal conductivity substrates for thermal management in high-power systems. Sub-awardee The Ohio State University will support research tasks focused on device switching losses, paralleling techniques, and benchmarking prototype circuits. The four-year project beginning October 2022 also incorporates education and outreach activities to engage underrepresented minority students in science, technology, engineering, and mathematics careers.
Mod # | Description | Reason For Modification | Federal Obligation (Click to sort descending) | Date (Click to sort ascending) |
|---|---|---|---|---|
| Not listed | $1.5m | 9/13/22 |
Grant Number | Description | Subgrantee | Prime Award | Dollars Obligated (Click to sort descending) | Updated At (Click to sort ascending) |
|---|---|---|---|---|---|
R1329814S | The Ohio State University | Project Grant 2231026 | $388.0k | 11/9/22 |