Project Grant 2135112
- The National Science Foundation (NSF) awarded a $359,971 project grant to the University of Oklahoma to research methods for enhancing heat transfer across the interface between diamond substrates and gallium nitride (GaN) electronic devices. The project, funded under NSF's Engineering program (CFDA 47.041), aims to explore how evanescent electric fields can be leveraged to improve acoustic phonon transmission and thermal conductance at these critical interfaces. This work seeks to enable more...
- This $500,000 National Science Foundation project grant supports research into the reliability and failure analysis of vertical gallium nitride power devices from 2023 to 2025. Funded through the NSF Engineering program (CFDA 47.041), the award to Arizona State University will advance fundamental understanding of failure mechanisms in vertical GaN power devices. The university will use an interdisciplinary approach involving materials growth, device fabrication, reliability testing and failure...
- This $275,000 National Science Foundation (NSF) Project Grant, awarded under the NSF Technology, Innovation, and Partnerships (CFDA 47.084) program, funds the development and validation of materials and processes for advanced semiconductor manufacturing at Geminatio, a for-profit organization. The goal is to enable the progression of Moore's Law and strengthen domestic semiconductor manufacturing capacity and capability, which has been impacted by recent supply chain issues. The project seeks to...
- This Project Grant award from the National Science Foundation (NSF) Engineering program (CFDA 47.041) provides $249,969 to the University of Delaware to enhance the performance of gallium nitride (GaN)-on-silicon high electron mobility transistor technology for high frequency and high power electronics applications. The key research activities aim to develop a novel self-aligned T-shaped gate fabrication process to improve the radio frequency and power performance of GaN-on-silicon devices,...
- This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...
- This $1,000,000 Cooperative Agreement awarded by the National Science Foundation (NSF) under the Technology, Innovation, and Partnerships (CFDA 47.084) program aims to develop a process that uses sound energy and material stress to precisely cut and lift thin layers of gallium nitride (GaN) semiconductor material from a wafer, enabling the wafer to be reused multiple times. The project, awarded to Crystal Sonic Inc., a for-profit company based in Phoenix, Arizona, seeks to significantly reduce...
- The National Science Foundation awarded Pseudolithic Inc. a $255,999 Project Grant under the Engineering federal grant program (CFDA 47.041) to support the Integration of Heterogeneous Device Technologies project from August 1, 2021 to April 30, 2022. Under this award, Pseudolithic Inc. will develop and integrate heterogeneous semiconductor device technologies for millimeter-wave applications. Specifically, the company will work on developing gallium nitride high electron mobility transistors...
- The National Science Foundation (NSF) awarded a $550,000 Project Grant under the NSF Technology, Innovation, and Partnerships (CFDA 47.084) program to William Marsh Rice University for the project "DEVELOPING ADVANCED THERMAL PACKAGING MATERIALS FOR THE SEMICONDUCTOR INDUSTRY USING HEXAGONAL BORON NITRIDE NANOSHEETS". This PFI-TT (Partnerships for Innovation - Technology Translation) project aims to develop advanced hexagonal boron nitride (HBN)-enabled molding compound materials...
- This $199,997 project grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) to Texas State University aims to address challenges in integrating diamond with gallium oxide (Ga2O3) for high-performance electronic device applications. The key objectives are to: Develop a novel approach to grow uniform, high-quality diamond films directly on Ga2O3 substrates by incorporating an ultra-thin quenched carbon interlayer to mitigate thermal and lattice mismatch issues....
- This National Science Foundation (NSF) Technology, Innovation, and Partnerships (CFDA 47.084) Project Grant award of $275,000 to United Semiconductors, LLC supports the development of two critical hardware components for in-space manufacturing of advanced semiconductor materials: A Universal Crystal Growth Capsule designed to leverage microgravity conditions during crystal growth, enabling high-throughput production of high-purity semiconductor crystals. A novel Wafer Dicing Tool to achieve...
The National Science Foundation Division of Industrial Innovation awarded $256,000 under the Engineering (47.041) federal grant program to Future Semiconductor Business, Inc. from February 2022 to January 2023. The Project Grant funding will support the development of gallium nitride membranes for efficient thermal management in semiconductor manufacturing. Specifically, the awardee will utilize remote epitaxy and 2-dimensional layer transfer technologies to produce high-quality, freestanding GaN membranes integrated on heat sinks. This novel manufacturing process allows for multiple reuses of the costly GaN substrate material while maintaining quality. Integration of thin-film GaN on heat sinks is expected to solve intrinsic thermal management issues in GaN-based devices by efficiently dissipating heat. The proposed technology stands to decrease production costs for GaN-based products in sectors like healthcare, defense, 5G networks and clean energy. Feasibility will be confirmed through thermoreflectance testing of GaN-heat sink interfaces.
Mod # | Description | ReasonForModification | Federal Obligation | Date |
|---|---|---|---|---|
| Not listed | $256.0k | 2/5/22 |