SB134113RQ0487.pdf

Minimum Requirements – SB1341-13-RQ-0487: Deep Silicon Etch (DSE) System

The system shall meet or exceed the technical specifications identified below. All items must be new. Prototypes, demonstration models, used or refurbished instruments will not be considered for award.

Line Item 0001: One (1) Deep Silicon Etch (DSE) System, which shall meet or exceed the specifications identified below.

Option Line Item 0002: One (1) Field Upgradable Cassette Loading Option, which shall meet or exceed the specifications identified below.

1. GENERAL REQUIREMENTS

a. Wafer loading method for CLIN 0001 shall be either single wafer manual loading or cassette-based automatic loading. If Offeror offers both types, Offeror is encouraged to submit quotations for each, which shall be quoted on separate quotations.

b. If the model submitted for CLIN 0001 is single wafer manual loading, Offeror shall quote Option CLIN 0002 for the field upgradable cassette loading option.

2. SYSTEM CONFIGURATION

a. The process chamber shall achieve a base pressure of 6.6 x10 -5

Pa (5.0 x 10 -7

Torr) or lower in 24 hours or less.

b. The system shall process substrate sizes ranging from 50 mm to 200 mm in diameter or larger, including transparent substrates and substrates of variable thickness.

c. The system shall have a vacuum load lock to transport wafers in and out of the process chamber such that the chamber does not need to be vented between process runs.

d. The vacuum system shall be configurable with the roughing pump located in a remote location on a different building level.

e. The system shall be cassette loading, or be field-upgradable from single wafer loading to cassette loading.

3. PROCESS CHAMBER AND VACUUM SYSTEM

a. The chamber shall be equipped with a heater to heat the chamber walls up to a minimum of 80 °C.

b. The process chamber shall be able to reach and maintain a base pressure of 1.0 x 10 -3

Pa (7.5 x 10 -6

Torr) in 2 min or less after each process.

c. The vacuum system shall be equipped with a throttle valve and controller for independent control of process gas flow and chamber pressure.

i) The process chamber pressure control shall be able to maintain the process pressure set-point to ± 2 % during the etch process.

ii) The process chamber operating pressure range shall be settable within the following pressure range: ≤ 0.1 Pa to ≥ 13 Pa (1 x 10 -3

Torr to 9.0 x 10 -2

Torr).

d. The high-vacuum pump shall be a corrosive resistant turbomolecular pump.

e. The roughing pump shall be a corrosive resistant dry pump.

4. PROCESS GAS PANEL

a. The system shall have a minimum of 6 gas channels.

b. The process gas panel shall be equipped with digital mass flow controllers (MFCs) that control gas flow with a precision ± 5 % and an accuracy of ± 5 %.

c. Each of the channels shall be independently controlled.

d. The gas shut-off valves shall be able to open or close in 1 sec or less.

5. PLASMA POWER SOURCES

a. The system shall be capable of sustained power of 0 to 3000 W or higher with ± 2 % or better precision and repeatability.

b. The system shall also be equipped with a radio frequency or equivalent power supply that operates at 0 to 500 W or higher with ± 2 % or better precision and repeatability.

i) The RF power supply shall be capable of programmable pulsing during the etch.

c. The system shall be able to ignite and sustain a plasma with an SF6 partial pressure of

0.7 Pa (5 x 10

-3

Torr) or lower.

6. SUBSTRATE HANDLING

a. The system shall be capable of and include all necessary hardware to process Si wafers in standard diameters of 50 mm, 100 mm, 150 mm, and 200 mm, and irregular shaped wafer pieces.

b. The substrate loading shall be capable of centering the wafer on the etch electrode to within ± 1.0 mm or less.

c. Wafer clamping shall be accomplished by either mechanical clamping or electro-static clamping.

i) The edge exclusion shall be 5 mm or less;

ii) The system shall be able to handle non-conductive substrates.

iii) The system shall be capable of plasma cleaning the substrate stage and clamping mechanism without a substrate loaded.

d. For Cassette-based automatic loading mode:

i) The substrate loading shall be capable of wafer flat alignment and centering the wafer on the etch electrode to within ± 1.0 mm or less.

7. SUBSTRATE TEMPERATURE CONTROL

a. The substrate temperature shall be controllable and selectable over the following range:

i) ≤ –15 °C to ≥ 50 °C

b. Substrate temperature control (in cooling or heating modes) shall be uniform across all substrate sizes to within ± 2 % of the temperature set point.

8. PROCESS CAPABILITIES

a. The system shall be capable of performing the “Bosch” etch or equivalent. Specific process capability requirements are:

i) Etching arrays of 5 µm wide trenches in Si ≥ 200 µm deep. Higher aspect ratio trench etching is preferred.

ii) Etched Si sidewall of 90º ± 0.1º across the diameter of the wafer, not including the 5 mm-wide edge exclusion area.

iii) Sidewall tilt shall be ≤ 0.1 º across 200 mm diameter wafer. The Si etch depth uniformity shall be ± 7 % or less across a 200 mm-diameter wafer.

iv) Critical dimension (CD) control for a 5 µm wide x 40 µm deep etched feature shall be less than 0.1 µm from top to bottom.

v) The etch rate for large features (1 mm ) on 100 mm diameter Silicon wafer with at least 10 % open area shall be ≥ 30 µm/min. Faster silicon etching rate is preferred.

vi) The mask undercut shall be ≤ 20 nm for a 40 µm deep etched feature.

vii) The Si-to-photoresist mask etch selectivity shall be ≥ 50:1.

viii) The Si-to-silicon dioxide mask etch selectivity shall be ≥ 100:1.

ix) The sidewall scallop depth shall be less than 20 nm with an optimized process.

x) No notch shall be observed at silicon dioxide interface with 30% or more silicon over etching in 20 um wide x 20 um deep or similar size trench.

b. The system shall have programmable parameter ramping capability for etch power and etch pressure.

9. PROCESS ENDPOINT DETECTION:

a. The system shall be equipped with optical emission spectroscopy (OES) or similar automatic endpoint detection.

b. The end-point detector shall work on the sample with 1.0 % or less open area.

c. The end-point detector shall work with etch pressures ≤ 0.7 Pa to ≥ 12.0 Pa (5.0 x

-3

Torr to 9.0 x 10 -2

Torr).

d. The end point detection subsystem shall be integrated into the process control software for easy implementation into process recipes.

e. The end point detection system shall not require any position alignment.

10. CONTROL SYSTEM AND SOFTWARE

a. The control system shall be capable of setting process parameter limits accessible only to administrator level access.

b. The control system shall be capable of data logging of all monitored process parameters.

c. The operating system shall be able to operate within a secure network domain.

d. The system shall be equipped with a Microsoft Windows 7 operating system.

11. SAFETY: The system shall meet all SEMI S2 safety standards and be compatible with

NFPA 318 installation standards.

12. SERVICE SUPPORT

a. Aftermarket support shall include a response by phone by a technician within 1 business day and a qualified field service engineer on site at NIST within 2 business days.