amendment_0001_SB1341_13_RQ_0487.pdf

Amendment 1 - NIST RFQ SB1341-13-RQ-0487

The purpose of this amendment is to answer questions posed by a potential Offeror.

Question 1: Section 8a (ii)- Etched Si sidewall of 90deg. +/-0.1deg. across the diameter of the wafer, not including the 5mm-wide edge exclusion area. Please confirm the wafer size.

Answer 1: 200 mm diameter wafer.

Question 2: Section 8a (iv)- Critical dimension (CD) control for a 5um wide x 40um deep etched feature shall be less than 0.1um from top to bottom. I assume this means the 5um etch diameter needs to be controlled to +/-0.1um along the entire 40um deep etch. Please confirm.

Answer 2: Yes.

Question 3: Section 8a (vi)- The mask undercut shall be <=20nm for a 40um deep etched feature.

Please confirm how this dimension will be measured. For example, do we measure the undercut distance from the edge of the photoresist to the sidewall of the Si hole (just under the photoresist at the top of the Si hole) after etching the 40um deep feature?

Answer 3: Yes.

All other terms and conditions of the original solicitation, including closing date and time, remain unchanged and in full effect.