Dual Band Barrier Detector Epitaxial Growth SOW v2.pdf

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STATEMENT OF WORK:

DUAL BAND BARRIER DETECTOR EPITAXIAL GROWTH

Updated: 26 June 2012

I. USE:

AFRL/RYDP is seeking to procure dual band barrier structures grown via molecular beam epitaxy on 3” GaSb substrates.

II. MINIMUM REQUIREMENTS:

ITAR compliance

Wafer size = 3” GaSb, double-side polished, Te doped (n-type, n = 1.0-2.0 E17 cm-2), EPD

< 5 E3 cm-2

Doping tolerance for absorbers < 0.2 E16 cm-3

Doping tolerance for contacts < 0.2 E18 cm-3 for n-type, < 0.2 E19 cm-3 for p-type

Intentionally undoped superlattices should be p-type

Tolerance for thickness of layers in superlattices < 0.5 ML

Interface type: InSb-like

III. DEMONSTRATED EXPERIENCE:

The vendor shall demonstrate relevant experience in growing device-quality strained layer superlattice infrared detectors on 3” GaSb susbstrates. Data (to include dark current measurements) from detectors/focal plane arrays fabricated with material grown by the vendor shall be provided.

IV. DELIVERY SCHEDULE:

Lots of wafers with material of our design shall be delivered over an 18-month period. Each lot shall consist of two (2) each 3” GaSb wafers. Delivery shall be carried out within 12 weeks of receipt of a design from AFRL/RYDP.

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