Draft_Statement of Work.pdf

68-1036-21 SOW

Optoelectronics and Radiation Effects Research

STATEMENT OF WORK

1.0 INTRODUCTION

The Optoelectronics and Radiation Effects Branch within the Electronic Sciences and Technology Division (ESTD), Code 6800, of the US Naval Research Laboratory is engaged in the development of advanced semiconductor materials, devices, and circuits for applications in a wide array of application including photovoltaics, infrared imaging, and advanced materials and devices for space applications. The potential application areas for these new technologies address a broad range of space based military missions, so the research includes reliability testing, physics of failure analysis, and space environmental testing including nuclear and space radiation environments.

The goal of this task is to provide scientific and engineering support for advanced semiconductor materials, devices, and circuits to increase capability and reliability of military missions for both terrestrial and space applications.

2.0 OBJECTIVE

The objective of this work is to provide Research and Development (R&D) capability to the Optoelectronics and Radiation Effects Branch in key technical areas. The Optoelectronics and Radiation Effects Branch performs modeling, simulation, and design efforts to produce novel device designs for operation in the space environment. These designs are realized in working devices through semiconductor growth and fabrication, and the device performance is measured in the characterization laboratories within the Optoelectronics and Radiation Effects Branch. The Optoelectronics and Radiation Effects Branch researches technologies ranging from basic electronic materials to optoelectronic devices, each with their own critical performance parameters such as efficiency of operation, responsiveness, power output, and resiliency in the space environment.

3.0 SCOPE

The contractor shall provide associated research and development for a wide range of NRL research activities related to radiation effects. The following task areas and descriptions indicate the specific nature of these research efforts.

4.0 TASK DESCRIPTIONS

4.1 Task 1: Semiconductor Material/Device/Circuit Modeling, Simulation, and Design

4.1.1. The Contractor shall perform theoretical research to develop physics-based numerical models of electronic and atomic structure of electronic and optoelectronic devices. The goal of these efforts is to develop a theoretical basis for understanding the the physics of operation of these systems.

4.1.2. The Contractor shall conduct experimental research on device model execution and interpretation of experimental data for device operation.

4.1.3. The Contractor shall develop specialized physics-based computer models for the simulation of linear and nonlinear optical interactions of ultrashort optical pulses with semiconductor materials and devices, and apply those models to understanding carrier generation and transport in materials and devices.

4.2 Task 2: Semiconductor Growth, Processing and Device Fabrication

4.2.1. The Contractor shall grow semiconductor materials for producing the devices modeled in 4.1. The growth techniques should include molecular beam epitaxy (MBE), organometallic vapor phase epitaxy (OMVPE), atomic layer deposition (ALD), and sputter deposition as well as those techniques specified by the Task Manager. The choice of growth technique is based on what is most appropriate for the material of choice and the intended application. The growths employ various semiconductor materials for achieving a wide variety of structures.

4.2.2. The Contractor shall fabricate devices modeled in 4.1 from materials grown in 4.2.1.

The goal of this effort is to produce functional devices such as optical detectors, solar cells, field-effect transistors (FETs), and diodes that can be electrically or optoelectronically measured.

4.2.3. The Contractor shall fabricate integrated circuits by using the parts/devices developed/fabricated in Task 4.1 and Tasks 4.2.1 and 4.2.2, and integrating commercial off-the-shelf (COTS) parts for applications to be specified by the Task Manager. The application of interest often requires development beyond the discrete part (e.g. an integrated circuit).

In these cases, circuits are to be fabricated using the parts that have been developed, and commercial parts where appropriate. Examples are optoelectronic applications such as focal plane arrays and the associated read-out circuits and solar cell arrays.

4.2.4. The Contractor shall perform fabrication and processing of semiconductor devices including the following: Removal of residual oxides from the backs of silicon wafers using both wet chemistry and plasma processes; deposition of metals using both shadow and lithographic masks, including the use of special non-radiative deposition equipment;

performs material characterization using spectroscopic ellipsometry, stylus profilometry, and other characterization techniques as required for the specified material system.

4.3 Task 3: Semiconductor Material and Device Characterization

4.3.1. The goal of these measurements is to produce data that validate the predictions of the modeling, simulation, and design efforts as well as demonstrate the functionality of novel electronic devices developed within this project.

4.3.2. The Contractor shall characterize structural attributes for the materials, devices, and circuits that are grown and fabricated under this project. Structural characterization techniques may be optical microscopy, ellipsometry, x-ray diffraction, and electron microscopy. The choice of specific technique depends on the material and material structure under study. The results of these characterizations determine the atomic and crystalline structure of the materials grown within the project.

4.3.3. The Contractor shall characterize electrical attributes for the materials, devices, and circuits that are grown and fabricated under this project. Electrical characterization techniques include current-voltage (I-V), capacitance-voltage (C-V), ac conductance, and Hall effect. Characterization of active and/or passive microwave devices involves use of network analyzers, spectrum analyzers and other microwave test equipment to determine the linear and/or nonlinear characteristics of the devices.

4.4 Task 4: Reliability and Environmental Testing of Semiconductor Materials and Devices in Simulated Space Environments.

4.4.1. The goal of this task is to determine how the devices and integrated circuits of interest perform in operational environments.

4.4.2. The Contractor shall conduct reliability testing for devices studied in this project.

The reliability testing refers to measurement of the pertinent parameters from the devices and circuits to include electrical, optical and/or thermal properties of the devices. The reliability testing also includes failure analysis of the failed devices to determine failure modes and mechanisms.

4.4.3. The Contractor shall perform space environmental testing to evaluate the effects of particle irradiation on satellite subsystems, including, but not limited to: low-energy proton testing, energetic particle testing of optoelectronics and imaging systems, and heavy-ion and proton evaluations of single particle interactions in devices and integrated circuits, including high-speed technologies operating at gigabit per second data rates.

Environmental testing is done to demonstrate the device and/or circuit performance in a relevant environment. This testing includes device and circuit characterization before, during, and after exposure to various environmental factors including electrical bias, particle radiation, and optical approaches to simulating particle radiation effects. These measurements also include annealing studies after the simulated space environmental exposure.

4.4.4. The Contractor shall develop and implement linear and nonlinear optical approaches for carrier injection into semiconductor materials and devices for the purposes of simulating the effects of particle radiation on the materials and devices. This task includes laser source development, experimental optical beam line development and characterization, measurement of the linear and nonlinear optical properties of relevant materials and material systems, as well as linear and nonlinear-optical experimental design and implementation for the purposes simulating the effects of particle irradiation on the materials, devices, and circuits of interest.

4.4.5. The Contractor shall perform linear and nonlinear optical measurements to simulate the effects of particle irradiation on semiconductor devices and circuits. This task shall include sample preparation and mounting, test setup design and implementation, including board design for both static and high-speed measurements, optical system characterization and calibration, and data acquisition and analysis.

4.4.6. The Contractor shall perform linear and nonlinear optical measurements on materials of interest to this effort, as appropriate, including, but not limited the nonlinear-optical z-scan measurements, linear and nonlinear absorption, stimulated Raman gain, four-wave mixing, and pump-probe measurements.

5.0 SECURITY

All work will be at the UNCLASSIFIED level.

6.0 TRAVEL

During the performance of this task order, local, CONUS, and OCONUS travel costing up to $67,000.00 per annum may be required.

6.1. Travel / Temporary Duty (TDY): Travel to other government facilities or contractor facilities may be required to conduct experimental research or to attend government meetings, reviews, or symposia. Attendance at scientific conferences will be required.

6.2. The Contractor shall submit all travel requirements (including plans, agendas, itineraries, and dates) for pre-approval to the Government. Approved travel will be on a strictly cost reimbursable basis.

7.0 MATERIALS, SERVICES AND EQUIPMENT

Material purchases are authorized as needed to support Tasks 1-4. Services (modeling and other), materials and equipment up to $100,000.00 may be required. Equipment DOES NOT include government furnished property.

8.0 LEVEL OF EFFORT (YEAR 1)

Labor Category Hourly Rate ($) Hours (Annually) Cost ($) Senior Researcher 133.00 2000 266,000.00 Senior Researcher 133.00 1500 199,500.00 Researcher i 107.00 2000 214,000.00 Researcher i 107.00 1000 107,000.00 Researcher iii 88.00 1000 88,000.00 Project Manager 129.00 100 12,900.00 Assistant Project Manager 83.00 100 8,300.00 Total 895,700.00

9.0 DELIVERABLES

CDRL Data Item Frequency A001 Contractor Labor Report Monthly A002 Financial Status Report Monthly A003 Technical and Data Analysis, Reports, Procedures, And Presentation Materials, including software and hardware developed herein

ASREQ

10.0 PERIOD OF PERFORMANCE

36 months after contract award.

11.0 PREFERRED ORDER TYPE

Cost Plus Fixed Fee Term.