JFET Transistor (MMBFJ177LT1G), Junction Field Effect, 30 V, -20 mA, 2.5 V, SOT-23, 3 Pin, 150 ??C… and 1 more item

The University of Virginia awarded contract A207_PO-0481806 to Newark Corporation on September 18, 2026, for the procurement of specialized electronic components with a total contract value of twenty-one dollars. The contract encompasses two distinct line items: ten units of JFET Transistor (MMBFJ177LT1G) junction field effect transistors at $0.66 per unit, and five units of Power MOSFET (STP80NF12) n-channel metal-oxide-semiconductor field-effect transistors at $2.90 per unit. Both items are being delivered to James Rogers Balser through Newark Corporation's distribution network.

These components represent critical semiconductor elements commonly utilized in electronics design and engineering applications. The JFET transistors feature 30-volt specifications with a -20 milliamp rating in SOT-23 three-pin surface-mount configuration, while the Power MOSFETs provide 120-volt, 40-ampere capacity in TO-220 through-hole packaging. The procurement was conducted by the University of Virginia's contracting organization, and the components are being supplied to the institution in Virginia.