Project Grant W911NF2510229
Award Date 9/1/25
Completion Date 8/31/28
Dollars Obligated $85K
Funding Federal Agency
Awarding Federal Agency
Federal Grant Program
Assistance Type
Project Grant
Place of Performance
Orlando, FL 32826, USA
Similar Awards
- This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...
- This $500,000 Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) will support research at The Washington University in St. Louis to develop a heterogeneous photonic integration platform. The key technical objectives are to: Enable the van der Waals integration of dissimilar functional nanomembranes, including barium titanate, gallium nitride, and cobalt ferrite, onto silicon and silicon nitride photonic circuits. This will allow the creation of...
- This Project Grant award of $631,792 from the National Science Foundation's (NSF) Mathematical and Physical Sciences program aims to develop material processes and devices that maximize the ferroelectric performance and endurance of trench capacitors for energy-efficient data storage. The key technical objectives are to: 1) Demonstrate non-planar, hafnia-based devices exhibiting greater than 10^15 switching endurance under back-end-of-line semiconductor processing conditions, and 2) Develop a...
- This Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences (CFDA 47.049) program provides $323,000 in funding to The Research Foundation for the State University of New York (RF-SUNY) at the University at Albany. The goal of the project is to develop highly conductive p-type aluminum gallium nitride (AlGaN) semiconductor materials through the use of beryllium (Be) co-doping. The research team plans to fabricate conductive p-type AlGaN using in-situ...
- This federal Project Grant award of $155,000.00 from the Office of Naval Research (ONR) under the Basic and Applied Scientific Research program (CFDA 12.300) is funding research to boost the efficiency of photonic computing by developing photonic memory and advanced analog-to-digital/digital-to-analog converter (ADC/DAC) integration. The primary work is being performed by the University of Florida (UF) and includes close collaboration with a sub-grantee, Colorado State University (CSU). The...
- This $419,379 Project Grant awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) aims to develop innovative gallium nitride (GaN)-based terahertz (THz) photoconductive emitters with an optical-to-THz energy conversion efficiency approaching or exceeding 100%. The research project will focus on three core areas: (1) designing GaN photoconductive switches with high breakdown electrical fields, (2) investigating ultrafast carrier dynamics and THz generation in...
- The Georgia Institute of Technology received a $550,000 project grant award from the Department of the Air Force Materiel Command Research Laboratory to develop semiconducting aluminum nitride as a new pathway for high-voltage, power, and temperature ultra-wide bandgap power electronic components. Funded through the Air Force Defense Research Sciences Program (CFDA #12.800), which aims to maintain U.S. technological superiority in scientific areas relevant to Air Force needs, the three-year...
- This $220,000 EAGER grant awarded by the National Science Foundation's (NSF) Division of Electrical, Communications and Cyber Systems supports research into the creation of atom-like defects in semiconductor materials for the development of single-photon emitters at telecommunications wavelengths. The project aims to implant elements such as vanadium and erbium into silicon carbide and aluminum gallium nitride films to form optically active defects that emit at 1.3 and 1.55 micron wavelengths....
- This National Science Foundation (NSF) Integrative Activities program project grant award provides $300,000 to the University of Nebraska-Lincoln (UNL) to conduct research on integrated photonic platforms leveraging solution-processed wide-bandgap cesium lead halide perovskites. The 2-year project, starting January 1, 2025, aims to advance the understanding of perovskite crystal growth and patterning synthesis, as well as develop cost-effective integrated photonic devices that can enable...
- The University of Pittsburgh was awarded a $225,000 project grant from the National Science Foundation Division of Electrical, Communications and Cyber Systems to demonstrate an active optical device that exploits the unique properties of phase-change and two-dimensional materials. The project aims to develop novel phase-change materials and microheaters composed of low-dimensional materials such as graphene that are transparent in the visible spectrum and compatible with any substrate. This...
THE RESEARCH AIMS TO EXPLORE NITRIDE BASED FERROELECTRIC PHOTONIC MEMORIES WITH ALUMINUM SCANDIUM NITRIDE ON GALLIUM NITRIDE PLATFORM THAT CAN BE OPERATED IN A NON VOLATILE FASHION.
Posted 8/13/25
Mod # | Description | ReasonForModification | Federal Obligation | Date |
|---|---|---|---|---|
| Not listed | $85.0k | 8/13/25 |