Project Grant 2532898
- The National Science Foundation (NSF) Engineering program (CFDA 47.041) awarded a $200,000 Project Grant to the University of Massachusetts Lowell (UML) to conduct research on advancing the materials and processing foundations necessary to enable the next generation of high-voltage diodes based on beta gallium oxide. The project, titled "ERI: LPCVD-BASED GROWTH AND ETCHING OF GALLIUM OXIDE FOR HIGH ASPECT RATIO VERTICAL TRENCH SCHOTTKY BARRIER DIODES," aims to address key challenges in...
- This Project Grant award from the National Science Foundation (NSF) Engineering Program (CFDA 47.041) provides $297,000.00 to The Research Foundation for the State University of New York (RF SUNY) to advance the development of radiation-tolerant and thermally managed high-voltage gallium oxide power diodes for high-power space electronics. The project aims to address limitations in producing high-quality beta-gallium oxide materials, integrating diamond layers to improve thermal performance, and...
- This $199,997 project grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) to Texas State University aims to address challenges in integrating diamond with gallium oxide (Ga2O3) for high-performance electronic device applications. The key objectives are to: Develop a novel approach to grow uniform, high-quality diamond films directly on Ga2O3 substrates by incorporating an ultra-thin quenched carbon interlayer to mitigate thermal and lattice mismatch issues....
- This $308,820 federal Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) to Iowa State University aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The key objectives are to (i) enable significantly efficient, smaller, and faster power switches using beta-phase gallium oxide semiconductors, (ii) address challenges at both the device and...
- This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...
- The National Science Foundation awarded a $439,603 Project Grant to the University of Texas at Dallas to support research under the Engineering federal grant program (CFDA 47.041). The award will fund continued research through 2025 in collaboration with institutions in Northern Ireland and the Republic of Ireland. Specifically, the funding will support investigation of gallium oxide as a semiconductor material for power electronics applications. The research team will evaluate gallium oxide...
- The National Science Foundation Division of Electrical, Communications and Cyber Systems awarded Virginia Polytechnic Institute & State University a $368,711 Project Grant to develop high-temperature ultra-wide bandgap gallium oxide power modules. With a completion date of April 30, 2024, this award will support research under the NSF's Engineering program (CFDA 47.041) to foster innovation in engineering research. Specifically, Virginia Tech will work to improve the quality of power...
- This National Science Foundation (NSF) Engineering (CFDA 47.041) Project Grant award, totaling $303,103, aims to develop robust, efficient, and compact packaged ultra-wide bandgap gallium oxide power switches for high voltage, high temperature applications. The lead institution, University of Texas at Dallas (UTD), will collaborate on this 3-year project to address existing challenges in ultra-wide bandgap semiconductor device design, materials properties, and packaging techniques. The key...
- This National Science Foundation (NSF) Engineering (CFDA 47.041) project grant award provides $563,851 to the University of Wisconsin-Madison to research and develop ultra-wide bandgap AlGaN channel transistors for high-voltage, low-loss power electronics. The key objectives are to demonstrate 10 kV transistors with 10x lower on-state resistance compared to silicon carbide technology, and to investigate the physical mechanisms governing transistor operation and reliability. This research aims to...
- This $500,000 National Science Foundation project grant supports research into the reliability and failure analysis of vertical gallium nitride power devices from 2023 to 2025. Funded through the NSF Engineering program (CFDA 47.041), the award to Arizona State University will advance fundamental understanding of failure mechanisms in vertical GaN power devices. The university will use an interdisciplinary approach involving materials growth, device fabrication, reliability testing and failure...
The National Science Foundation (NSF) Engineering program (CFDA 47.041) awarded a $300,207 project grant to the University of Massachusetts Lowell (UML) for "Collaborative Research: Radiation-Tolerant and Thermally Managed High-Voltage Gallium Oxide Power Diodes for High-Power Space Electronics." The project aims to advance the synthesis of high-quality beta-gallium oxide (β-Ga2O3) materials, integrate diamond layers to improve thermal performance, and develop high-voltage vertical power diode structures optimized for reliability in harsh environments. This research will support the development of next-generation power systems for space missions, defense platforms, and nuclear energy applications. The award period is from October 1, 2025 to September 30, 2028.
Mod # | Description | ReasonForModification | Federal Obligation | Date |
|---|---|---|---|---|
| Not listed | $300.2k | 8/1/25 |