This $360,000 Project Grant award from the National Science Foundation's (NSF) Division of Materials Research under the Mathematical and Physical Sciences program (CFDA 47.049) aims to revolutionize computer memory by developing new materials and devices for energy-efficient magnetic random-access memory (MRAM). The project will focus on enabling these devices using thin layers of special materials called van der Waals heterostructures grown on a wafer scale, which is crucial for practical...
This $318,712 project grant from the National Science Foundation's Mathematical and Physical Sciences program (CFDA 47.049) supports research at the University of Texas at Austin to develop new magnetic bilayer materials for spintronic applications. The investigators will grow and characterize ultrathin films of ferrimagnetic insulators and adjacent metallic layers to optimize their properties for memory and computing devices. Specifically, the team aims to establish structure-property...
This Project Grant award, provided by the National Science Foundation (NSF) through the Mathematical and Physical Sciences program (CFDA 47.049), supports a collaborative research effort between the University of Wyoming and Colorado State University to explore the novel magnetic properties of two-dimensional van der Waals magnets. The $232,786 award, effective August 1, 2024 through July 31, 2027, aims to investigate the unconventional magnetic domains and metastable magnetic phase...
This $360,000 Project Grant awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) funds a comprehensive theoretical investigation of magnon devices built upon two-dimensional (2D) magnetic materials. The primary objective is to elucidate the mechanisms underlying the generation, propagation, and detection of magnon currents within realistic 2D structures, with the goal of identifying material parameters capable of generating magnon currents comparable to or...
Carnegie Mellon University was awarded a $344,942 Project Grant from the National Science Foundation's Engineering program (CFDA 47.041) to support research on non-volatile magnetic memory devices utilizing field-free spin-orbit torque switching of perpendicularly polarized magnets. The research aims to demonstrate field-free deterministic magnetization switching of three classes of ferromagnetic materials with perpendicular magnetic anisotropy using electric field-induced out-of-plane spin...
This Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) provides $497,265 to Carnegie Mellon University (CMU) to demonstrate two key transformative device functionalities for next-generation memory and high-frequency electronics. The first goal is to develop a two-terminal spin-orbit torque based magnetic memory unit cell, where information is stored in the magnetic state of a ferromagnet, written via spin-orbit torque phenomena, and read through a new...
This $260,000 Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences program supports the development of energy-efficient nanoelectronics based on CMOS-compatible magnetoelectric transistors. The key objectives are to create novel logic and memory solutions integrating voltage-switched magnetoelectrics with transition-metal chalcogenide semiconductor channels. This research aims to achieve substantial improvements in energy efficiency for...
This $260,000 Project Grant award, funded by the National Science Foundation's (NSF) Mathematical and Physical Sciences program (CFDA 47.049), aims to advance high-performance and energy-efficient in-memory computing through the co-design of 2D ferroelectric materials and device stacks. The key objectives are to develop ferroelectric tunnel junctions (FTJs) that exhibit low switching voltages, high on/off ratios, and high on-state current densities - critical metrics for enabling...
This $359,500 National Science Foundation project grant supports the development of scalable three-terminal memory devices based on silicon-compatible antiferromagnetic materials at Northwestern University from June 2022 through May 2025. The university aims to design, fabricate, and characterize nonvolatile memory devices utilizing conductive antiferromagnetic materials like Mn3Sn, Mn3Ga, and IrMn3 that can be sputter deposited on silicon substrates. The project will demonstrate electrical read...
This $400,000 Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) will support the development of energy-efficient quantum materials-based magnetic tunnel junctions (MTJs) for unconventional computing applications. The international, multi-institutional research team from the University of Minnesota, Indian Institute of Technology Ropar, and Indian Institute of Technology Delhi will conduct theoretical research, materials synthesis, and advanced...
This $360,000 federal Project Grant awarded by the National Science Foundation (NSF) under the Mathematical and Physical Sciences program (CFDA 47.049) aims to develop new materials and devices for high-density, energy-efficient magnetic random-access memory (MRAM). The project focuses on creating wafer-scale epitaxial van der Waals spin heterostructures, consisting of a 2D ferromagnetic material (Fe3GaTE2) and a topological quantum material with strong spin-orbit coupling. This innovative approach seeks to overcome limitations of conventional spin-orbit torque switching in MRAM devices. The grant supports collaborative research conducted by Rutgers, The State University to produce these advanced spin heterostructures via molecular beam epitaxy and evaluate their properties through first-principles calculations. The project runs from May 1, 2025 to April 30, 2028 and aims to enable transformative advancements in energy-efficient computing technologies.