This $360,000 federal Project Grant awarded by the National Science Foundation (NSF) under the Mathematical and Physical Sciences program (CFDA 47.049) aims to develop new materials and devices for high-density, energy-efficient magnetic random-access memory (MRAM). The project focuses on creating wafer-scale epitaxial van der Waals spin heterostructures, consisting of a 2D ferromagnetic material (Fe3GaTE2) and a topological quantum material with strong spin-orbit coupling. This innovative...
The Regents of the University of California at Riverside received a $345,000 Project Grant award from the National Science Foundation Division of Electrical, Communications and Cyber Systems. The grant supports research exploring van der Waals heterostructure magnetic devices for high-efficiency and high-density memory from June 1, 2021 to May 31, 2024. This award is part of the NSF Directorate for Engineering's $345K investment in the Engineering program (CFDA #47.041). The program seeks to...
The National Science Foundation (NSF) awarded a $1,600,000 Project Grant under the NSF Engineering Program (CFDA 47.041) to the Regents of the University of California at Riverside (UC Riverside) to develop new types of combinatorial memory and logic devices based on magnetic spin waves. The project, led by Dr. Alexander Khitun, Professor Jacob Greenstein, and Professor Caroline Ross, aims to create a transformative approach to data storage and processing by utilizing phase and amplitude of spin...
The National Science Foundation (NSF) awarded a $1,000,000 Project Grant under the Technology, Innovation, and Partnerships (CFDA 47.084) program to The Leland Stanford Junior University. The grant, with a performance period from March 1, 2024 to February 28, 2027, aims to develop resilient, fast-switching, and energy-efficient magnetoresistive random access memory (MRAM) chips to revolutionize mobile artificial intelligence (AI). The research seeks to address technical hurdles around thermal...
This $260,000 Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences program supports the development of energy-efficient nanoelectronics based on CMOS-compatible magnetoelectric transistors. The key objectives are to create novel logic and memory solutions integrating voltage-switched magnetoelectrics with transition-metal chalcogenide semiconductor channels. This research aims to achieve substantial improvements in energy efficiency for...
This $260,000 Project Grant award, funded by the National Science Foundation's (NSF) Mathematical and Physical Sciences program (CFDA 47.049), aims to advance high-performance and energy-efficient in-memory computing through the co-design of 2D ferroelectric materials and device stacks. The key objectives are to develop ferroelectric tunnel junctions (FTJs) that exhibit low switching voltages, high on/off ratios, and high on-state current densities - critical metrics for enabling...
This $531,730 Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) will support research and development of next-generation non-volatile memory devices based on sliding ferroelectricity. The project, led by the University of Wisconsin-Madison, aims to harness the unique advantages of sliding ferroelectricity in atomically thin layered materials to create ultralow energy, fast-switching, and compact memory devices. The research will encompass...
This $400,000 Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) will support the development of energy-efficient quantum materials-based magnetic tunnel junctions (MTJs) for unconventional computing applications. The international, multi-institutional research team from the University of Minnesota, Indian Institute of Technology Ropar, and Indian Institute of Technology Delhi will conduct theoretical research, materials synthesis, and advanced...
This $359,500 National Science Foundation project grant supports the development of scalable three-terminal memory devices based on silicon-compatible antiferromagnetic materials at Northwestern University from June 2022 through May 2025. The university aims to design, fabricate, and characterize nonvolatile memory devices utilizing conductive antiferromagnetic materials like Mn3Sn, Mn3Ga, and IrMn3 that can be sputter deposited on silicon substrates. The project will demonstrate electrical read...
This $631,792 Project Grant, awarded by the National Science Foundation (NSF) under the Mathematical and Physical Sciences program (CFDA 47.049), aims to develop materials and devices that maximize the performance and endurance of ferroelectric hafnia-based compounds for energy-efficient data storage and processing. The key technical objectives are to: 1) demonstrate non-planar, hafnia-based devices with over 10^15 switching endurance under back-end-of-line (BEOL) semiconductor processing...