Project Grant 2425589
Award Date
9/15/24
Completion Date
8/31/27
Dollars Obligated
$632K
Funding Federal Agency
National Science Foundation
Awarding Federal Agency
Division of Materials Research
Awardee
Purdue University (YRXVL4JYCEF5)
Federal Grant Program
47.049
Assistance Type
Project Grant
Place of Performance
West Lafayette, IN, USA
Similar Awards
This Project Grant awarded by the National Science Foundation (NSF) under the Mathematical and Physical Sciences (CFDA 47.049) federal grant program provides $260,000.00 in funding to the University of Maryland, College Park to develop high-performance, energy-efficient ferroelectric tunnel junctions (FTJs) for in-memory computing applications. The project aims to co-design two-dimensional (2D) ferroelectric materials, interfaces, and multilayer stacks to achieve key FTJ performance metrics,...
This National Science Foundation (NSF) CAREER award, under the Engineering (CFDA 47.041) program, provides $531,730 to the University of Wisconsin-Madison to research and develop a new type of non-volatile memory device based on sliding ferroelectricity in van der Waals materials. The project aims to harness the low-energy, fast switching, and compact advantages of this novel ferroelectric phenomenon to create advanced memory and computational technologies for applications like artificial...
This Project Grant award, provided by the National Science Foundation's Engineering (NSF ENG) program (CFDA 47.041), supports fundamental research to develop a scalable manufacturing method for preparing phase-pure ferroelectric hafnium oxide and hafnium zirconium oxide materials. The $125,152 award to Virginia Polytechnic Institute & State University (Virginia Tech) aims to advance the understanding of how atomic layer deposition process parameters impact amorphous structure and its...
This National Science Foundation (NSF) Mathematical and Physical Sciences (CFDA 47.049) project grant award supports research to achieve a fundamental understanding and deterministic control of the piezoelectric properties of hafnia-based ferroelectric materials. The $620,097 award to the University of Nebraska will fund a collaborative project with the Luxembourg Institute of Science & Technology to conduct systematic experimental studies and theoretical modeling on the impact of factors...
This Project Grant award of $360,000.00 from the National Science Foundation's (NSF) Mathematical and Physical Sciences program, with a period of performance from May 1, 2025 to April 30, 2028, aims to develop new materials and devices for high-density magnetic random-access memory (MRAM). The project, led by Rutgers, The State University, will focus on creating wafer-scale epitaxial van der Waals spin heterostructures that can enable more efficient switching in MRAM devices. This research seeks...
The National Science Foundation (NSF) Division of Electrical, Communications and Cyber Systems awarded a $385,000 Project Grant to Northwestern University to develop cross-layer techniques from device to circuit and architecture for the large-scale integration of ferroelectric field effect transistors (FeFET) with complementary metal-oxide-semiconductor (CMOS) technology. This research aims to enable emerging computing applications, such as AI, robotics, augmented/virtual reality, and autonomous...
This $335,345 National Science Foundation Project Grant supports research to develop a scalable manufacturing process for phase-pure ferroelectric hafnium oxide and hafnium zirconium oxide through plasma-enhanced atomic layer deposition. The University of Virginia will lead a multi-disciplinary, multi-national team in characterizing the impact of atomic layer deposition parameters on amorphous film structure and resulting material phases using advanced microscopy techniques. The research aims to...
The National Science Foundation (NSF) Office of Integrative Activities awarded a $400,000 Project Grant under the Integrative Activities program (CFDA 47.083) to the South Dakota School of Mines and Technology. This 3-year grant, beginning on October 1, 2023, aims to identify new 2D ferroelectric materials, understand how to control their properties, and explore the impact of their polarization on electrical conductivity. The research employs a combination of experimental techniques and...
This Project Grant award of $183,269 from the National Science Foundation's (NSF) Mathematical and Physical Sciences program (CFDA 47.049) supports research at the University of Tennessee focused on exploring the different metastable phases of the dielectric material hafnium oxide (HfO2) under external stimuli like pressure and electric fields. The key objectives are to: (i) identify new high-pressure states of matter in HfO2, (ii) reveal mechanical and tribological properties, (iii) stabilize...
This Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences program (CFDA 47.049) supports research at The Leland Stanford Junior University (Stanford University) to explore van der Waals ferroelectricity in two-dimensional (2D) layered semiconductor materials. The $284,687 award aims to advance the synthesis, characterization, and understanding of the ferroelectric and electronic properties of these 2D semiconductors, with potential applications in...