This Project Grant award of $518,949 from the National Science Foundation's Engineering program (CFDA 47.041) supports research by Arizona State University (ASU) to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs). The goal is to develop these β-Ga2O3 FinFETs that can achieve high breakdown voltage and low on-resistance, surpassing the performance of current silicon carbide (SiC) and gallium nitride (GaN) power devices. The research...
This $500,000 National Science Foundation project grant supports research into the reliability and failure analysis of vertical gallium nitride power devices from 2023 to 2025. Funded through the NSF Engineering program (CFDA 47.041), the award to Arizona State University will advance fundamental understanding of failure mechanisms in vertical GaN power devices. The university will use an interdisciplinary approach involving materials growth, device fabrication, reliability testing and failure...
This Project Grant award from the National Science Foundation (NSF) Engineering program (CFDA 47.041) provides $249,969 to the University of Delaware to enhance the performance of gallium nitride (GaN)-on-silicon high electron mobility transistor technology for high frequency and high power electronics applications. The key research activities aim to develop a novel self-aligned T-shaped gate fabrication process to improve the radio frequency and power performance of GaN-on-silicon devices,...
The National Science Foundation (NSF) awarded a $1,103,042 Project Grant under the Engineering program (CFDA 47.041) to Virginia Polytechnic Institute & State University (Virginia Tech) to conduct research on heterogeneous integration of wide-bandgap microelectronics and power electronics for efficient power delivery to AI processors in data centers. The research aims to address fundamental knowledge gaps in semiconductor materials, devices, magnetics, circuitry, and packaging to enable...
This award from the National Science Foundation (NSF) Division of Electrical, Communications and Cyber Systems under the Engineering CFDA program provides $1,499,996 to the University of Wisconsin System to conduct research on developing ultra-efficient, high-voltage monolithic bidirectional transistors (MBDTs) for use in power electronics applications. The key objectives are to: 1) demonstrate the first ultra-wide bandgap (UWBG) based MBDTs; 2) enhance the performance and manufacturability of...
Arizona State University was awarded a $500,000 Project Grant from the National Science Foundation Division of Electrical, Communications and Cyber Systems. The award is part of NSF's Engineering program (CFDA 47.041) to support CAREER: FAITHFUL, REDUCIBLE, AND INVERTIBLE LEARNING IN DISTRIBUTION SYSTEM FOR POWER FLOW. Under this five-year project grant awarded February 1, 2021 with a completion date of January 31, 2026, Arizona State University will conduct research at its Tempe, Arizona campus...
The National Science Foundation awarded a $439,603 Project Grant to the University of Texas at Dallas to support research under the Engineering federal grant program (CFDA 47.041). The award will fund continued research through 2025 in collaboration with institutions in Northern Ireland and the Republic of Ireland. Specifically, the funding will support investigation of gallium oxide as a semiconductor material for power electronics applications. The research team will evaluate gallium oxide...
This $598,505 federal project grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) supports research to develop new knowledge and capabilities for the atomically precise and scalable nanomanufacturing of semiconductor heterostructures, with a focus on gallium nitride materials. The research aims to address key challenges in power electronics, microelectronics, and photonics by co-designing the structures, processes, and properties of gallium nitride...
This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...
The National Science Foundation (NSF) awarded a $124,910 Project Grant to Arizona State University (ASU) on January 1, 2024 under the Engineering program (CFDA 47.041). The grant supports research to improve the efficiency and affordability of thin-film photovoltaic devices based on earth-abundant low-dimensional chalcogenide materials. Key activities include: 1) understanding the anisotropic growth mechanisms and carrier transport properties of the chalcogenide absorbers, 2) tailoring the...
This National Science Foundation (NSF) Engineering program (CFDA 47.041) Project Grant award of $521,938 to Arizona State University (ASU) aims to advance the development of ultrawide bandgap aluminum nitride (AlN) field-effect transistors (FETs) for high-performance power electronics. The project will tackle critical material and device challenges to unlock the full potential of AlN for applications such as transportation electrification, renewable energy, and grid modernization. Over the 5-year award period from June 1, 2024 to May 31, 2029, the research will focus on innovative integrated material and device engineering to significantly improve AlN epitaxy, surfaces, contacts, and power FET devices. The successful outcomes are expected to enable high-efficiency, high-voltage, fast, compact, and robust power electronics that can contribute to carbon neutrality and net-zero emission goals. The project will also provide various educational and workforce development opportunities.