This $300,182 Project Grant from the National Science Foundation's Mathematical and Physical Sciences program will fund research at Dartmouth College to develop new transparent conducting materials for optoelectronic applications. Specifically, the grantee will engineer the atomic composition, crystallinity, and electronic transport properties of two-dimensional metal oxide nanosheets printed from liquid metals. Initial studies show these 2D oxides have unique overlapping grain structures,...
This Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) provides $332,817 to the University of California, Santa Barbara (UCSB) to conduct research on novel gate-stack engineering for 2D materials-based field-effect transistors (FETs). The project aims to develop a comprehensive simulation framework and fabricate test structures to address the design, fabrication, reliability, and performance challenges of 2D semiconductor FETs. This research seeks to...
This National Science Foundation project grant of $398,671 will fund research at Duke University from September 1, 2022 to August 31, 2025 under the Engineering (47.041) federal grant program. The research aims to advance understanding of metal-nanomaterial interfaces in transistors by addressing longstanding scientific questions about how electrical current is controlled at the nanoscale. Specifically, the project will study contact gating effects and ambient air exposure impacts on...
This $300,000 federal Project Grant was awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) to Carnegie Mellon University (CMU). The grant aims to experimentally demonstrate wafer-scale 2D transistors in the "silicon-impossible" territory (sub-5-nm channel length) and investigate their fundamental limits through a combination of experimental and theoretical efforts. Key objectives include: (1) developing a high-throughput, scalable technique for...
This National Science Foundation (NSF) Engineering program (CFDA 47.041) Project Grant award provides $250,000 to the University of Florida for a 3-year period from October 1, 2024 to September 30, 2027. The award aims to experimentally demonstrate wafer-scale 2D transistors with physical channel lengths below 5 nm, investigating the fundamental limits of these transistors to advance computational technologies beyond the "silicon-impossible" territory. The key activities include: (1)...
This $340,000 National Science Foundation project grant supports research at the University of Texas at Austin to develop two-dimensional ambipolar materials and device structures for logical and machine learning circuits. The grant is part of NSF's $47 million Engineering program, which funds research and education activities to advance engineering innovations. Specifically, the researchers will study dual-gate ambipolar field-effect transistors made from two-dimensional materials to design new...
This Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) will fund the University of California, Los Angeles (UCLA) to develop a novel gallium oxide-based transistor for high-voltage power conversion applications. The $206,457 award aims to demonstrate e-mode β-Ga2O3 fin field-effect transistors (FinFETs) with breakdown voltages beyond 3kV, on-resistance less than 1 mΩ-cm2, and switching efficiency greater than 98% at 15kHz. The research will...
This $410,000 Project Grant from the National Science Foundation's Engineering program (CFDA 47.041) will fund research at The Pennsylvania State University to develop new approaches for electrical contacts to two-dimensional semiconducting transition metal dichalcogenides. The research team will test hypotheses about the role of metal deposition techniques, use of semimetals, and junction formation in reducing contact resistance. They will perform experiments to isolate the effects of key...
The National Science Foundation (NSF) awarded a $260,000 Project Grant under the Mathematical and Physical Sciences program (CFDA 47.049) to The Research Foundation for the State University of New York (RF SUNY), with a performance period from Sep 15, 2024 to Aug 31, 2027. The project aims to develop energy-efficient nanoelectronics based on CMOS-compatible magnetoelectric transistors. Key objectives include realizing a "magneto-electric transistor" that combines magneto-electrics...
The National Science Foundation (NSF) Directorate for Engineering awarded a two-year, $250,000 EAGER grant to the University of California, Santa Barbara (UCSB) to explore the development of gate-all-around (GAA) field-effect transistors (FETs) using two-dimensional transition metal dichalcogenide (2D-TMD) materials. The project aims to advance the scalability and performance of complementary metal-oxide-semiconductor (CMOS) transistors by leveraging the unique properties of 2D-TMDs compared...