This $250,000 project grant award, funded by the National Science Foundation (NSF) Engineering program (CFDA 47.041), aims to experimentally demonstrate wafer-scale 2D transistors with physical channel lengths below 5 nm, the "silicon-impossible territory." The key activities include:
Developing a scalable fabrication technique for sub-5 nm 2D transistor arrays
Creating a quantum transport simulation to elucidate device physics and optimization strategies
Establishing an...
The National Science Foundation (NSF) Directorate for Engineering awarded a two-year, $250,000 EAGER grant to the University of California, Santa Barbara (UCSB) to explore the development of gate-all-around (GAA) field-effect transistors (FETs) using two-dimensional transition metal dichalcogenide (2D-TMD) materials. The project aims to advance the scalability and performance of complementary metal-oxide-semiconductor (CMOS) transistors by leveraging the unique properties of 2D-TMDs compared...
This Project Grant award from the National Science Foundation (NSF) Engineering program (CFDA 47.041) provides $612,712 to The Leland Stanford Junior University to develop fundamental steps necessary for three-dimensional (3D) integrated circuits (ICs) with higher density than conventional scaling. The key products and services to be delivered include:
Integrating atomically thin materials like carbon nanotubes and MoS2 into individual circuit layers, which will then be stacked in 3D to...
This National Science Foundation project grant of $398,671 will fund research at Duke University from September 1, 2022 to August 31, 2025 under the Engineering (47.041) federal grant program. The research aims to advance understanding of metal-nanomaterial interfaces in transistors by addressing longstanding scientific questions about how electrical current is controlled at the nanoscale. Specifically, the project will study contact gating effects and ambient air exposure impacts on...
This Project Grant from the National Science Foundation Division of Civil, Mechanical, and Manufacturing Innovation supports research to advance manufacturing processes for semiconductor electronic and quantum devices at the atomic scale. Funded for $292,392 over two years from January 1, 2023 through December 31, 2024, the award supports the University of Maryland, College Park under the NSF Engineering program (CFDA 47.041).
The research aims to develop robust manufacturing techniques with...
This $275,000 National Science Foundation (NSF) Project Grant, awarded under the NSF Technology, Innovation, and Partnerships (CFDA 47.084) program, funds the development and validation of materials and processes for advanced semiconductor manufacturing at Geminatio, a for-profit organization. The goal is to enable the progression of Moore's Law and strengthen domestic semiconductor manufacturing capacity and capability, which has been impacted by recent supply chain issues. The project seeks...
This Project Grant award from the National Science Foundation (NSF) under the Mathematical and Physical Sciences (CFDA 47.049) Federal Grant Program provides $223,249 to the University of California, Santa Barbara (UCSB) to fund a research project titled "CMOS+X: Novel Gate-Stack Engineering for 2D Materials-Based FETs." The objective is to address scientific and technical barriers to developing high-performance, low-power, and energy-efficient two-dimensional semiconductor...
This $410,000 National Science Foundation project grant supports research at Dartmouth College from September 2022 through August 2025 to develop a new paradigm of two-dimensional metal oxide transistors enhanced through quantum modulation doping. The researchers will develop a fundamental understanding of how heterointerfaces can be engineered to enhance electronic transport in channels consisting of heterostructures of 2-3 nm thick two-dimensional wide bandgap oxide semiconductors. This...
This Project Grant award from the U.S. National Science Foundation (NSF) Engineering program (CFDA 47.041) provides $400,000 in funding to Duke University for a collaborative research project with ETH Zürich. The project aims to explore the thermal implications of scaling down the size of metal contacts to two-dimensional (2D) semiconductor materials, particularly tungsten disulfide, to enable continued advancements in semiconductor technology beyond the physical limits of silicon. Key goals...
This Project Grant award from the National Science Foundation (NSF) Engineering program (CFDA 47.041) is providing $518,949 to Arizona State University to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) fin field-effect transistors (FinFETs). The key objectives are to develop an in-situ gallium etching technique within a metal-organic chemical vapor deposition (MOCVD) reactor to enable the fabrication of high-quality, tall β-Ga2O3 fins, and then leverage these structures...
This $300,000 Project Grant awarded by the National Science Foundation (NSF) Engineering program (CFDA 47.041) aims to develop wafer-scale two-dimensional (2D) transistors that can operate in the "silicon-impossible" territory, with physical channel lengths below 5 nanometers. The key objectives are:
Establishing a scalable fabrication technique for producing wafer-scale 2D transistor arrays with sub-5 nm channel lengths.
Creating a quantum transport simulator to model the device physics of these highly scaled 2D transistors and guide further optimization.
Building an open-access database to systematically catalog the performance characteristics of the developed 2D transistors.
This research program, led by Carnegie Mellon University, seeks to advance the state-of-the-art in transistor scaling and enable new energy-efficient computing capabilities by leveraging the unique properties of 2D semiconductor materials. The award period is from October 1, 2024 to September 30, 2027 and does not include any planned sub-awards.