Project Grant 1941316

This Project Grant award of $631,792 from the National Science Foundation's (NSF) Mathematical and Physical Sciences program aims to develop material processes and devices that maximize the ferroelectric performance and endurance of trench capacitors for energy-efficient data storage. The key technical objectives are to: 1) Demonstrate non-planar, hafnia-based devices exhibiting greater than 10^15 switching endurance under back-end-of-line semiconductor processing conditions, and 2) Develop a...

The National Science Foundation (NSF) Directorate for Engineering awarded a two-year, $250,000 EAGER grant to the University of California, Santa Barbara (UCSB) to explore the development of gate-all-around (GAA) field-effect transistors (FETs) using two-dimensional transition metal dichalcogenide (2D-TMD) materials. The project aims to advance the scalability and performance of complementary metal-oxide-semiconductor (CMOS) transistors by leveraging the unique properties of 2D-TMDs compared...

The National Science Foundation (NSF) Division of Electrical, Communications and Cyber Systems awarded a $385,000 Project Grant to Northwestern University to develop cross-layer techniques from device to circuit and architecture for the large-scale integration of ferroelectric field effect transistors (FeFET) with complementary metal-oxide-semiconductor (CMOS) technology. This research aims to enable emerging computing applications, such as AI, robotics, augmented/virtual reality, and autonomous...

This Project Grant awarded by the National Science Foundation (NSF) under the Mathematical and Physical Sciences (CFDA 47.049) federal grant program provides $260,000.00 in funding to the University of Maryland, College Park to develop high-performance, energy-efficient ferroelectric tunnel junctions (FTJs) for in-memory computing applications. The project aims to co-design two-dimensional (2D) ferroelectric materials, interfaces, and multilayer stacks to achieve key FTJ performance metrics,...

This $359,500 National Science Foundation project grant supports the development of scalable three-terminal memory devices based on silicon-compatible antiferromagnetic materials at Northwestern University from June 2022 through May 2025. The university aims to design, fabricate, and characterize nonvolatile memory devices utilizing conductive antiferromagnetic materials like Mn3Sn, Mn3Ga, and IrMn3 that can be sputter deposited on silicon substrates. The project will demonstrate electrical read...

This $419,379 Project Grant awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) aims to develop innovative gallium nitride (GaN)-based terahertz (THz) photoconductive emitters with an optical-to-THz energy conversion efficiency approaching or exceeding 100%. The research project will focus on three core areas: (1) designing GaN photoconductive switches with high breakdown electrical fields, (2) investigating ultrafast carrier dynamics and THz generation in...

This National Science Foundation (NSF) CAREER award, under the Engineering (CFDA 47.041) program, provides $531,730 to the University of Wisconsin-Madison to research and develop a new type of non-volatile memory device based on sliding ferroelectricity in van der Waals materials. The project aims to harness the low-energy, fast switching, and compact advantages of this novel ferroelectric phenomenon to create advanced memory and computational technologies for applications like artificial...

This two-year, $252,000 Project Grant from the National Science Foundation Division of Materials Research will support research into mechanically controlling the electronic properties of two-dimensional ferroelectrics. The grantee, the University of Nebraska, will investigate using mechanical stress and strain as novel methods to deterministically modulate polarization states and related changes in electrical resistance in 2D ferroelectric materials. Researchers will use scanning probe...

This $410,000 National Science Foundation project grant supports research at Dartmouth College from September 2022 through August 2025 to develop a new paradigm of two-dimensional metal oxide transistors enhanced through quantum modulation doping. The researchers will develop a fundamental understanding of how heterointerfaces can be engineered to enhance electronic transport in channels consisting of heterostructures of 2-3 nm thick two-dimensional wide bandgap oxide semiconductors. This work...

This $300,000 federal Project Grant was awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) to Carnegie Mellon University (CMU). The grant aims to experimentally demonstrate wafer-scale 2D transistors in the "silicon-impossible" territory (sub-5-nm channel length) and investigate their fundamental limits through a combination of experimental and theoretical efforts. Key objectives include: (1) developing a high-throughput, scalable technique for...