Project Grant 1653241

This $260,000 Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences program supports research to develop high-performance, energy-efficient in-memory computing devices using co-designed two-dimensional (2D) ferroelectric materials and stacks. The overarching goal is to realize an energy-efficient logic-memory bifunctional device based on ferroelectric tunnel junctions (FTJs) that can be integrated with silicon microelectronics. The research aims to...

This $410,000 National Science Foundation project grant supports research at Dartmouth College from September 2022 through August 2025 to develop a new paradigm of two-dimensional metal oxide transistors enhanced through quantum modulation doping. The researchers will develop a fundamental understanding of how heterointerfaces can be engineered to enhance electronic transport in channels consisting of heterostructures of 2-3 nm thick two-dimensional wide bandgap oxide semiconductors. This work...

This two-year, $252,000 Project Grant from the National Science Foundation Division of Materials Research will support research into mechanically controlling the electronic properties of two-dimensional ferroelectrics. The grantee, the University of Nebraska, will investigate using mechanical stress and strain as novel methods to deterministically modulate polarization states and related changes in electrical resistance in 2D ferroelectric materials. Researchers will use scanning probe...

The National Science Foundation (NSF) Division of Electrical, Communications and Cyber Systems awarded a $385,000 Project Grant to Northwestern University to develop cross-layer techniques from device to circuit and architecture for the large-scale integration of ferroelectric field effect transistors (FeFET) with complementary metal-oxide-semiconductor (CMOS) technology. This research aims to enable emerging computing applications, such as AI, robotics, augmented/virtual reality, and autonomous...

This $497,265 Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) will support research at Carnegie Mellon University focused on two key objectives: Demonstration of a two-terminal spin-orbit torque based magnetic memory device, where information is stored in the magnetic state, written using spin-orbit torque phenomena, and read through a new type of magnetoresistance in Weyl semimetals. Development of an electric-field tunable band-pass filter device...

The National Science Foundation (NSF) Office of Integrative Activities awarded a $400,000 Project Grant under the Integrative Activities program (CFDA 47.083) to the South Dakota School of Mines and Technology. This 3-year grant, beginning on October 1, 2023, aims to identify new 2D ferroelectric materials, understand how to control their properties, and explore the impact of their polarization on electrical conductivity. The research employs a combination of experimental techniques and...

The National Science Foundation (NSF) Directorate for Engineering awarded a two-year, $250,000 EAGER grant to the University of California, Santa Barbara (UCSB) to explore the development of gate-all-around (GAA) field-effect transistors (FETs) using two-dimensional transition metal dichalcogenide (2D-TMD) materials. The project aims to advance the scalability and performance of complementary metal-oxide-semiconductor (CMOS) transistors by leveraging the unique properties of 2D-TMDs compared...

The National Science Foundation (NSF) awarded a $284,687 Project Grant under the Mathematical and Physical Sciences (CFDA 47.049) program to The Leland Stanford Junior University (Stanford University) on January 1, 2025. The research project aims to explore a new family of atomically thin ferroelectric semiconductors to advance high-performance logic devices, efficient memory architectures, and integrated nonlinear photonics. The key objectives are to: (1) synthesize molybdenum and...

This NSF-funded project grant, awarded through the NSF Engineering program (CFDA 47.041), is focused on developing novel synthesis techniques for thin film magnetic oxides to enable electric and magnetic field tunable high frequency devices. The $390,001 award to Oakland University aims to engineer the magnetic properties of ferrite and garnet films through combinatorial substrate epitaxy in order to eliminate the need for high external magnetic fields and power requirements. The key...

This $531,730 federal Project Grant award, provided by the National Science Foundation's Engineering program (CFDA 47.041), aims to develop a new type of memory device called "sliding ferroelectric tunnel junctions." The project seeks to harness the advantages of nonvolatile sliding ferroelectricity in atomically thin layered materials, including ultralow energy consumption, fast switching speed, and a compact footprint. The research will encompass fundamental studies of sliding...