The semiconductor industry relies on a highly interconnected global supply and fabrication chain to produce advanced semiconductor technologies

The National Institute of Standards and Technology awarded a $126,313.42 cooperative agreement to Theiss Research on April 1, 2026, under the Measurement and Engineering Research and Standards program (CFDA 11.609) to develop a comprehensive understanding of electrodeposition mechanisms and nanoscale feature-filling processes relevant to advanced semiconductor interconnects.

The recipient will employ shell-isolated nanoparticle-enhanced Raman spectroscopy (SHINERS) to conduct operando spectroscopic investigation of electrodeposition processes, monitoring surface adsorbates, additive co-adsorbate interactions, and metal growth front evolution during damascene-type electrodeposition under realistic electrochemical conditions. Complementary techniques including X-ray photoelectron spectroscopy (XPS) for chemical state analysis and scanning electron microscopy (SEM) for morphological characterization will support the core investigations. The work addresses critical gaps in semiconductor manufacturing transparency and material processing strategies to advance metrology essential for development of new materials, production methods, processing protocols, and packaging in chip manufacturing, aligned with US CHIPS Act objectives.

Performance runs through March 31, 2029, at Theiss Research's location in La Jolla, California. The project supports generation of new knowledge and training of talent for the U.S. semiconductor industry, led by Principal Investigator Dr. Khurana.

Activities

The proposed project and PI DR. Khurana aim to develop a comprehensive understanding of additive-assisted electrodeposition mechanisms and nanoscale feature-filling processes relevant to advanced interconnect technologies, with a central focus on operando spectroscopic techniques. The core investigative tool will be shell-isolated nanoparticle-enhanced raman spectroscopy (shiners), which enables high-sensitivity, non-invasive probing of interfacial chemistry and growth dynamics under realistic electrochemical conditions. Shiners will be employed to monitor surface adsorbates, additive CO-adsorbate interactions, and the evolution of metal growth fronts during damascene-type electrodeposition. These studies will be supported by a suite of complementary techniques, including x-RAY photoelectron spectroscopy (XPS) for chemical state analysis, scanning electron microscopy (SEM) for morphological characterization, infrared reflection/absorption spectroscopy (iras) and surface-enhanced infrared absorption spectroscopy (seiras) for molecular vibrational studies, and electrochemical scanning tunneling microscopy (EC-STM) and atomic force microscopy (EC-AFM) for in situ surface imagingexpected outcomes: the continued scaling of interconnect architectures in semiconductor technologies has underscored the need to explore alternative metals to address the growing limitations associated with the increased resistivity of copper interconnects at nanoscale dimensions. This project is designed to tackle that challenge by establishing new protocols for the electrodeposition of platinum-group metals (pgms) into nanoscale features, guided by a detailed mechanistic understanding of the deposition processes. The research will leverage operando spectroscopic techniques, with a primary emphasis on methods such as shiners, to probe interfacial phenomena and additive-mediated growth mechanisms in real time. Insights gained from these studies will be shared with industrial collaborators to support the CO-development of scalable deposition strategies compatible with existing interconnect integration schemes.

Intended beneficiaries

The research published would benefit the public, the chip making industry will also benefitsubrecipient activities: the recipient does not intend to subaward funds.