This grant will fund research aimed at improved accuracy of the scanning electron microscope (SEM) when performing dimensional measurements of nanometer-scale structures such as nano-particles,…
Ended Cooperative Agreement Awarded Last action
- Award ID
- 70NANB23H107
- Recipient
-
Theiss Research UEI F67SDLWMJH17
- Awarding agency
-
National Institute of Standards and Technology
Department of Commerce
- Obligated
- $280,450
Award facts
- Assistance listing
- 11.609 Measurement and Engineering Research and Standards
- Completion date
- Originally
- Place of performance
- La Jolla, CA 92037, USA
Award details come from USAspending.gov.
Description
- Activities
- The research funded by this grant will seek to implement a better approximation of the secondary electron generation physics. The better approximation will be based on density functional theory, which has proven to be very accurate for computing ground state properties of materials. This approach will be combined with an implementation of the bethe-salpeter equation to include the effect of electronic excitations. This approach accounts for some phenomena (e.g., detailed band structure, quantum mechanical exchange) that are omitted by the existing approach. The new model will be used to compute the energy- and momentum-dependent dielectric functions of materials, then from these the corresponding energy loss functions. If successful, this process will be repeated for many materials, beginning first with materials that are important in industrial applications of SEM to dimensional measurements, for example in integrated electronics and next generation electronic devices, where industrial task-groups are highlighting the need for sub-0.5 NM accuracies. The more accurate energy loss functions will improve the accuracy of existing electron-scattering simulators, which are used to infer feature dimensions from their secondary electron images.
- Expected outcomes
- If the new approach is successful, the accuracy of inferred feature dimensions will be improved. The capability to make such inferences will be made publicly available via NIST?s jmonsel simulator. SEM is one of very few measurement techniques suitable for applications in nano-technology, where the improvements are expected to speed developments.
- Intended beneficiaries
- In the first instance, semiconductor electronics manufacturing and other nanotechnologies should benefit. There are potentially other applications for such improved models, for example to the understanding of resist exposure processes in electron beam and extreme ultra-violet lithography, where such improved understanding could lead to design of better resists.
- Subrecipient activities
- The recipient does not intend to subaward funds.
Transactions
| Action | Obligated | Date |
|---|---|---|
| Amendment | $0 | |
| Amendment | $100,370 | |
| Amendment | $90,040 | |
| Original award | $90,040 |
Quick answers
Who received award 70NANB23H107?
70NANB23H107 was awarded to Theiss Research by National Institute of Standards and Technology (Department of Commerce) on July 1, 2023.
How much is award 70NANB23H107 worth?
$280,450 has been obligated on 70NANB23H107.
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