Purchase Order 80NSSC26P1008
- Not listed
- NASA's National Aeronautics and Space Administration Shared Services Center awarded a $100,000 firm fixed-price purchase order to Biotronics, Inc., headquartered in North Olmsted, Ohio, on January 8, 2026, for deep reactive ion etching services of single crystal 4H-silicon carbide wafers. The contract, which carries no set-aside designation, is scheduled for completion by June 26, 2026, and represents the award following a sole source Special Notice issued on December 18, 2025. The Government...
- This is a $211,420.37 firm-fixed price purchase order awarded by the National Aeronautics and Space Administration (NASA) Shared Services Center to Integrated Holdings, Inc. (doing business as D&N Gage, Inc.), a minority-owned and small disadvantaged business. The contract is for the deep reactive ion etching of three 4-inch single crystal 4H-Silicon Carbide (SiC) wafers, with a 50-micron thick diaphragm and a diameter ranging from 300 to 900 microns. This requirement was originally...
- This $901,461 firm fixed price purchase order was awarded by the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center to Samco Inc., a small business semiconductor equipment company based in Santa Clara, California. The contract is for the delivery of an Inductively Coupled Plasma Deep Reactive Ion Etching (ICP DRIE) system, which will be used to etch high-aspect-ratio and nanoscale silicon structures in the Detector Development Laboratory. The system must be...
- NASA's Shared Services Center awarded a purchase order to Ganify, Inc. for research-grade gallium nitride amplifiers valued at $150,000.00 on July 10, 2026. The order calls for 20 amplifiers capable of continuous operation at 800°C in air for a minimum of 1 hour, with performance specifications including a transistor On/Off ratio minimum of 500 at 800°C, chip size not exceeding 2.5 mm × 2.5 mm, unity gain bandwidth of 0.5 MHz at 800°C, minimum gain of 20 dB at 800°C, and rail-rail voltage of...
- This $160,427 firm fixed-price purchase order was awarded by the Shared Services Center, a civilian federal agency, to General Electric Company (GE) for the development of back-end-of-line (BEOL) silicon carbide (SiC) integrated circuit processing. The contract has a completion date of November 30, 2024. This award was made under a competitive solicitation issued by the NASA Glenn Research Center, which did not use a small business set-aside. The statement of work for this procurement...
- The NASA Shared Services Center awarded a purchase order to Classone Equipment Inc. for preventative maintenance service for a deep etching system, valued at $48,137.50, on June 30, 2026. The contract is firm fixed price with no small business set-aside. Performance takes place at NASA Goddard Space Flight Center in Greenbelt, Maryland. The order calls for delivery of a preventative maintenance kit containing chamber and load lock o-rings, valve rebuild kits, viewport assemblies, and replacement...
- This is a firm fixed-price purchase order awarded by the National Aeronautics and Space Administration (NASA) Shared Services Center to MSE Supplies LLC, a minority-owned limited liability company, for the delivery of 6 wafers of 4-inch 4H-silicon carbide (SiC), vanadium-doped semi-insulating material. The contract has a potential value of $28,735.00 and a completion date of September 30, 2023. The requirement was originally posted as a sole-source opportunity, as MSE Supplies LLC was determined...
- NASA Glenn Research Center awarded a definitive firm fixed price contract to General Electric Company for fabrication of small-feature extreme environment durable 4H-SiC silicon carbide junction field effect integrated circuits on 100 mm diameter SiC wafers on November 19, 2024, with a ceiling value of $278,753. Place of performance is Schenectady, NY. The originating special notice solicitation posted on June 16, 2023 with a due date of July 5, 2023. The contract has an ultimate completion date...
- This is a $249,999.00 firm fixed price purchase order contract awarded by the National Aeronautics and Space Administration (NASA) Langley Research Center to Frequency Management International, Inc., a small business. The purpose is to design single-event effect (SEE) and total ionizing dose (TID) hardened silicon carbide power metal-oxide-semiconductor field effect transistors (SiC power MOSFETs) for use in next-generation aerospace power systems, including high-temperature boost power...
- NASA's Shared Services Center awarded Sienna Technologies, Inc. a $65.5K firm fixed-price purchase order on August 26, 2024, for multi-chip module packaging of silicon carbide pressure sensors and electronics. This sole-source contract, which carries no set-aside designation, requires Sienna Technologies to package silicon carbide integrated pressure and temperature sensors and SiC amplifier chips onto aluminum nitride circuit boards in a multi-chip module configuration. Work will be performed...
The National Aeronautics and Space Administration Shared Services Center awarded a purchase order to Biotronics, Inc. for $85,000.00 on July 15, 2026 for dry etching of a combined Gallium Nitride epitaxial layer and Silicon Carbide substrate. Work will be performed in North Olmsted, Ohio. The order requires etching a single 3-inch diameter 4H-SiC wafer pre-electroplated with a patterned nickel etch mask to 280 microns depth, creating a diaphragm with approximately 70-micron thickness and radii ranging from 300 to 900 microns. Deliverables include achieving diaphragm thickness uniformity of 5 percent across the wafer, smooth surfaces with fewer than 5 micro mask artifacts per surface, features free of scallops, reasonable radius at the diaphragm base-to-sidewall intersection without notching, elimination of edge-wall trenching artifacts, and an aspect ratio of no less than 5. The order also requires dry-etching the top side p-GaN layer to 3 micrometers using a provided SiO2 etch mask, confirming etched depth measurements, and performing solvent cleaning. Ultimate completion date is August 19, 2026.
Name | Description | Solicitation Number | FederalAgency | Type | PostedDate |
|---|---|---|---|---|---|
Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate | 80NSSC26936816Q | National Aeronautics and Space Administration Shared Services Center | Solicitation 1/1 | 7/6/26, 7:15 PM |
Mod # | Description | ReasonForModification | Federal Obligation | Date |
|---|---|---|---|---|
| Not listed | Not listed | $85.0k | 7/13/26 |