Purchase Order 80NSSC26P0124
- Not listed
- This contract award, valued at $46,450.00, is for the purchase of 4H-Silicone Carbide 100MM Epiwafers by the National Aeronautics and Space Administration (NASA). The award was made to Ii-Vi Advanced Materials, LLC, a subsidiary of Coherent Corp, which is described as a leading provider of high-precision optical solutions for the defense and aerospace industries. The contract has a firm fixed price and an ultimate completion date of August 27, 2025. The contract was awarded under a special...
- This $160,427 firm fixed-price purchase order was awarded by the Shared Services Center, a civilian federal agency, to General Electric Company (GE) for the development of back-end-of-line (BEOL) silicon carbide (SiC) integrated circuit processing. The contract has a completion date of November 30, 2024. This award was made under a competitive solicitation issued by the NASA Glenn Research Center, which did not use a small business set-aside. The statement of work for this procurement...
- NASA's Shared Services Center awarded Sienna Technologies, Inc. a $65.5K firm fixed-price purchase order on August 26, 2024, for multi-chip module packaging of silicon carbide pressure sensors and electronics. This sole-source contract, which carries no set-aside designation, requires Sienna Technologies to package silicon carbide integrated pressure and temperature sensors and SiC amplifier chips onto aluminum nitride circuit boards in a multi-chip module configuration. Work will be performed...
- NASA's Shared Services Center awarded a $54,000 firm fixed-price purchase order to Numed Technologies, LLC for the fabrication of pressure and temperature sensors in 4H silicon carbide (SiC). The contract, awarded on May 22, 2024, with completion targeted for July 3, 2024, was issued as an 8(a) sole source special notice, recognizing Numed Technologies as the sole provider of this specialized capability. The work will be performed in Brighton, Michigan and supports NASA's requirement for...
- General Electric Company (GE) has been awarded a $117,224 firm fixed price purchase order by the National Aeronautics and Space Administration (NASA) Shared Services Center to provide fabrication of silicon carbide high temperature electronics on 100mm silicon carbide wafers. The work will be performed in Schenectady, New York with an anticipated completion date of September 30, 2022. No set-aside designation was applied to this solicitation. As a leading provider of aerospace technologies and...
- This is a firm fixed-price purchase order awarded by the National Aeronautics and Space Administration (NASA) Shared Services Center to MSE Supplies LLC, a minority-owned limited liability company, for the delivery of 6 wafers of 4-inch 4H-silicon carbide (SiC), vanadium-doped semi-insulating material. The contract has a potential value of $28,735.00 and a completion date of September 30, 2023. The requirement was originally posted as a sole-source opportunity, as MSE Supplies LLC was determined...
- General Electric Company's GE Research division has been awarded a $278,753 firm fixed-price definitive contract by NASA's Glenn Research Center to fabricate small-feature extreme environment durable 4H-silicon carbide (4H-SiC) junction field effect transistor integrated circuits on 100 millimeter diameter SiC wafers. The contract, awarded on November 19, 2024, with an ultimate completion date of September 1, 2026, represents work to be performed at GE Research's Schenectady, New York...
- This federal contract award, with an ID of 80NSSC25PA254, was issued by the National Shared Services Center (NSSC) of NASA to MSE Supplies LLC, a minority-owned and Asian-Pacific American-owned limited liability company based in Tucson, Arizona. The contract, valued at $70,033.97, is for the procurement of homoepitaxially grown N-type and P-type 4H-silicon carbide (4H-SiC) on semi-insulated 4H-SiC substrates. The original solicitation was issued as a Special Notice by NASA's NSSC, indicating...
- This federal contract award, valued at $95,172.63, was issued by NASA's Shared Services Center to MSE Supplies LLC, a minority-owned, Asian-Pacific American-owned limited liability company, for the delivery of 10 wafers of 4-inch 4H-silicon carbide (SiC) substrates with specific doping and epitaxial layer requirements. The contract was awarded on a sole-source basis under FAR Part 13 procedures for commercial items, as MSE Supplies LLC was determined to be the sole provider of the requested...
- This is a $249,999.00 firm fixed price purchase order contract awarded by the National Aeronautics and Space Administration (NASA) Langley Research Center to Frequency Management International, Inc., a small business. The purpose is to design single-event effect (SEE) and total ionizing dose (TID) hardened silicon carbide power metal-oxide-semiconductor field effect transistors (SiC power MOSFETs) for use in next-generation aerospace power systems, including high-temperature boost power...
NASA's National Aeronautics and Space Administration Shared Services Center awarded a $100,000 firm fixed-price purchase order to Biotronics, Inc., headquartered in North Olmsted, Ohio, on January 8, 2026, for deep reactive ion etching services of single crystal 4H-silicon carbide wafers. The contract, which carries no set-aside designation, is scheduled for completion by June 26, 2026, and represents the award following a sole source Special Notice issued on December 18, 2025. The Government determined that Biotronics possessed unique capabilities to perform this specialized microfabrication service, which involves etching a 4-inch, single crystal 4H-SiC wafer approximately 350 microns thick with a patterned nickel etch mask to achieve critical specifications including diaphragm thickness uniformity within 5 percent and an aspect ratio of at least 5. This procurement supports NASA's advanced materials and component manufacturing requirements, likely for space-qualified instrumentation or thermal management applications where silicon carbide offers superior performance characteristics. The work will be performed at North Olmsted, Ohio, with the procurement executed under Federal Acquisition Regulation authorities for commercial items and services. The technical scope reflects NASA's need for precision semiconductor processing capabilities essential to developing next-generation components for space exploration missions and scientific instruments.
Name | Description | Solicitation Number | FederalAgency | Type | PostedDate |
|---|---|---|---|---|---|
Deep Reactive Ion Etching of Single Crystal 4H-SiC | 80NSSC26921522Q | National Aeronautics and Space Administration Shared Services Center | Special Notice 1/1 | 12/18/25, 12:15 PM |
Mod # | Description | ReasonForModification | Federal Obligation | Date |
|---|---|---|---|---|
| P00002 | Other Administrative Action | $30.0k | 3/25/26 |