The single-source follow-on shire project (silicon carbide for high voltage in radiation environments) aims to develop and experimentally demonstrate radiation-hardened SIC power devices capable of…
Active Grant For Research Awarded Last action
- Contract number
- 80NSSC26K0163
- Awardee
-
Vanderbilt University UEI GTNBNWXJ12D5
- Awarding agency
-
Shared Services Center
National Aeronautics and Space Administration
- Obligated
- $1,369,381
Award facts
- Contract value 35% obligated
- $3,888,775.00 Current and potential, with all options
- Completion date 35% complete
- Current and potential, with all options
- Contracting staff
- NAICS code
- Not on record
- PSC
- AJ11 General Science And Technology R&D Services; General Science And Technology; Basic Research
- Set-aside
- No set-aside
- Competition
- Not Competed Only One Source
- Pricing
- Other
- Place of performance
- Nashville, TN 37203, USA
Award details come from SAM.gov/FPDS.
About this award
Vanderbilt University's Sponsored Programs Administration has been awarded a $3.9M grant by a civilian Shared Services Center to develop and experimentally demonstrate radiation-hardened silicon carbide (SiC) power devices under the Single-Source Follow-On Shire Project. The research initiative aims to create SiC power devices capable of sustaining single-event burnout thresholds in high-voltage radiation environments. The grant, awarded on August 1, 2025, with an ultimate completion date of January 31, 2029, represents a continuation of work in advanced materials and radiation-tolerant semiconductor technology. This award carries no set-aside designation and will be performed at Vanderbilt's Nashville, Tennessee location.
The Shire Project addresses critical national needs in developing radiation-hardened electronics for applications in space exploration, defense systems, and other high-radiation environments where conventional semiconductor devices fail. Vanderbilt University's established track record of executing complex federal research and development projects across multiple scientific domains, including advanced computing and aerospace technology, positions the institution to deliver the specialized expertise required for this single-source follow-on effort. The research outcomes are expected to advance capabilities in power electronics resilience and support broader federal objectives in space technology and defense modernization.
Description
The single-source follow-on shire project (silicon carbide for high voltage in radiation environments) aims to develop and experimentally demonstrate radiation-hardened SIC power devices capable of sustaining single-event burnout (SEB) thresholds
Quick answers
Who was awarded contract 80NSSC26K0163?
80NSSC26K0163 was awarded to Vanderbilt University by Shared Services Center (National Aeronautics and Space Administration) on August 1, 2025.
How much is contract 80NSSC26K0163 worth?
The government has obligated $1,369,381 on 80NSSC26K0163. Its current value, with exercised options, is $3,888,775.
Was contract 80NSSC26K0163 competed?
The extent of competition for 80NSSC26K0163 was not competed.
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