Tech Specs Power Device Analyzer .pdf

Rev 06/27/2024

Technical Specifications Power Device Analyzer

DLA Product Test Center, VTA

I. The contractor shall provide all labor, materials, tools, transportation, supplies, supervision, etc. (except as noted), necessary to provide all components for a Power Device Analyzer to the Defense Supply Center Columbus (DSCC), Columbus, Ohio. The salient characteristics of the Power Device Analyzer are as listed below:

A. Power Device Analyzer with support equipment and with the following salient characteristics:

1. Shall be new, not refurbished.

2. Shall be supplied with Operating manual.

3. Shall be able to evaluate all device parameters under various operating condition to improve power electronics circuit design performance including the following:

a. Measures all IV parameters (Ron, BV, Leakage, Vth, Vsat, etc.)

b. Measure transistor input, output, and reverse transfer capacitances (Ciss, Coss, Crss, Cies, Coes, Cres, Rg) at high bias voltages

c. Qg curve measurement for Nch MOSFETs and IGBTs

d. Power loss (conduction, driving, and switching) evaluation

e. Menu-driven user interface specially designed for circuit designers (Easy Test Navigator -

ETN)

f. Quick and automatic device datasheet generation

g. Datasheet characterization mode supports quick and easy evaluations of data sheet parameters

h. Wide operation I/V (500A, 3kV), Thermal test (−50 to +250 °C)

i. Oscilloscope View provides visual verification of pulsed measurement waveforms

j. Covers typical semiconductor devices and electronic components used in high-power circuits

4. Shall have the measurement and output accuracy are specified under the conditions listed below:

a. Temperature: 23 ±5 °C

b. Humidity: 20 to 70%, No condensation

c. Self-calibration after a 40-minute warm-up is required.

d. Ambient temperature changes less than ±1 °C after self-calibration execution. (Note: This does not apply to the MFCMU).

e. Measurement made within one hour after self-calibration execution. (Note: This does not apply to the MFCMU).

f. Calibration period: 1 year

g. SMU integration time setting: 10 PLC (1 nA to 1 A range, voltage range), 200 μs (20 A range), Averaging of high-speed ADC: 128 samples per 1 PLC

h. SMU filter: ON (for MPSMU)

i. The accuracy of the drain output current measurement specification is not guaranteed until 20 seconds after a voltage change.

5. Shall be able to operate in the following conditions:

a. The Power Device Analyzer must be able to be used under the conditions listed below.

Temperature: +5 to +40 °C Humidity: 20 to 70%, No condensation

b. When used with Thermostream and the air temperature is more than +20 °C Temperature:

+20 to +30 °C Humidity: 20% to 70%, No condensation

DLA Product Test Center, VTA

c. When used with Thermostream and the air temperature is less than +20 °C Temperature: +20 to +30 °C Humidity: 20 to 50%, No condensation

d. When used with a Thermal plate Temperature: +5 to +30 °C Humidity: 20 to 70%, No condensation

6. Shall have the following key specifications:

a. Collector/ drain channel

i. Maximum output

1. Voltage: +/- 3,000 V

2. Pulsed Current: +/- 500 A

3. DC Current: +/- 100 mA

ii. Minimum Resolution (Source)

1. Voltage: 25 uV

2. Current: 100 fA

iii. Minimum Resolution (Measurement)

1. Voltage: 500 nV

2. Current: 10 fA

b. Gate Channel

i. Maximum output

1. Voltage: +/- 100 V

2. Pulsed Current: +/- 1 A

3. DC Current: +/- 100 mA

ii. Minimum Resolution (Source)

1. Voltage: 200 nV

2. Current: 500 fA

iii. Minimum Resolution (Measurement)

1. Voltage: 200 nV

2. Current: 10 fA

c. Capacitance measurement

i. Max bias

1. Gate: +/- 100 V

2. Collector/ drain: +/-3,000 V

ii. Frequency range: 1 kHz to 1 MHz

iii. Capacitance range: 100 fF to 1 uF

7. Shall have the following measurement parameters:

a. Static characteristics

i. Threshold voltage: Vgs(th) and Vge(th)

ii. Transfer Characteristics: Id-Vgs, Ic-Vge and gfs

iii. On resistance: Rds-on and Vce (sat)

iv. Gate leakage current: igss and Iges

v. Output leakage current: idss and Ices

vi. Output Characteristics: Id-Vds and Ic-Vce

vii. Breakdown voltage: BVds and BVces

b. Gate charge characteristics

i. Gate Charge: Qg, Qg(th), Qgs, Qgd for Nch MOSFETs and IGBTs

c. Capacitance characteristics

i. Gate Resistance: Rg

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ii. Device Capacitiance: Ciss, Coss, Crss, Cgs, Cgd, Cies and Cres

d. Power loss: Driving loss/ switching loss and Conduction loss at specified duty cycle

8. Shall support the following power devices and electronic components:

a. MOSFETS

b. IGBTs

c. Diodes

d. Inductors

e. Capacitors

f. Shunt R

g. Resistors

h. Connectors

i. Cable

j. Relays

k. Photo couplers

l. Solid stat relays

9. Shall have the following operation ranges

a. IV functionality

i. Collector/ drain voltage: +/- 3,000 V

ii. Collector/ drain current: +/- 500 A

iii. Gate: +/- 30 V/ +/- 1 A (pulse) MCSMU

iv. Gate: +/- 100 V/ +/- 100 mA MPSMU

b. CV functionality

i. Gate DC Bias voltage: +/- 100 V

ii. Collection/ drain DC bias voltage: +/- 3,000 V

iii. Frequency: 1 kHz to 1 MHz

iv. Capacitance: 100 fF to 1 uF

c. Gate charge functionality

i. Qg, Qgd and Qd: 1 nC to 100 uC

ii. VDD: 0 to +3,000 V

iii. ID: 0 to 500A

iv. Gate drive: -30 to 30 V

10. Shall have the following measurement parameters:

a. Qg: 1 nC to 100 uC

b. Minresolution: 10 pC

c. Vds (Vce) @ high voltage: 0 to + 3,000 V

d. Resolution: 3 mV/ 6us

e. Vds (Vce) @ high current: -60 V to 60 V

f. Resolution: 100 uV/ 2 us

g. Vgs (Vge): -30 V to +30 V

h. V/T resolution: 40 uV/ 2 us

i. Id (Ic): 0 to 500A

j. I/T resolution: 2 mA/ 2 us

k. Ig: 10 nA to 1 A

l. I/T resolution: 10 pA/ 2 us

11. Shall have the following setting parameters:

a. Vds (Vce) @ high voltage: 0 V to +3,000 V

DLA Product Test Center, VTA

b. Resolution: 3 mV/ 6 us

c. Vds (Vce) @ high current: -60 to 60 V

d. Resolution: 100 uV/ 2 us

e. Id max: 450A

f. Gate drive Vgs (Vge): -30 V to +30 V

g. Resolution: 40 uV

h. Gate control current Ig: 1 uA to 1 A

i. Resolution: 0.1 uA

j. Current regulatory control voltage: -30 to +30 V

k. Resolution: uV

l. On-time: 50 to 950 us

m. Resolution 2 us

n. Target device: Nch MOSFET and IGBT TO packaged device

o. Target device: Nch MOSFET and IGBT module device

12. Shall have Ultra High Current capabilities consisting of the following:

a. Voltage range, resolution and accuracy

i. Voltage range: +/- 60 V

ii. Setting resolution: 200 uV

iii. Measure resolution: 100 uV

iv. Setting accuracy: +/- 0.23 + 10 mV

b. Current range, resolution and accuracy

i. Current range: +/- 500 A

ii. Setting resolution: 1 mA

iii. Measure resolution: 500 uA

iv. Setting resolution: +/- (0.6 + 0.3 + 0.01 * Vo)

v. Measure accuracy: +/- (0.6 + 0.3 + 0.01 * Vo)

c. UHCU Pulse width and resolution

i. Current range: 500 A

ii. Voltage pulse width: 10 usec – 1 msec

iii. Current pulse width: 10 usec – 1 msec

iv. Resolution: 2 usec

v. Pulse period: Duty ≤ 0.4%

d. Output peak power

i. Current range: +/- 500 A

ii. Peak power: 7.5 kW

13. Shall include the require test fixtures for functionality:

a. Fixture capability: Current expander capability

b. Selector capability: allows the user to switch the output between the HVSMU, MPSMU and

UHCU or HCSMU

c. 2 Thermocouple inputs

i. K-type thermocouple inputs

ii. Temperature range: -50° C to 300° C

iii. Thermocouple reading accuracy

1. +/- 2° C within temperature range 0° ≤ T < 100° C

2. +/- 5° C within temperature range T ≥ 100° C

3. +/- 5° C within temperature range T < 0° C

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iv. Other terminals/ indicators

1. Power indicator: 1 ea

2. High voltage indicator: 1 ea

3. Measurement mode indicator

a. IV mode: 1ea

b. CV mode 1ea

4. Interlock terminal: 1ea

5. Earth terminal: 1ea

6. Wrist strap terminal: 1ea

14. Shall have the following software interfaces:

a. GUI that can be accessed via its front panel

b. 15 inch touch screen

c. Softkeys

d. Rotary knob

e. Optional USB keyboard and mouse

f. Measurement setups and data can be stored on it’s SSD

g. Data can be exported to an external storage method

15. Shall have a GUI that has dedicated software for:

a. Datasheet characterization

b. I/V characterization

c. Three-terminal device capacitance measurements

d. Thermal monitor/ control

e. Device power loss calculations

f. Ready-to-use measurement templates for typical power device characteristics measurements

g. Ability to automatically accumulate measurement data on the SSD in exportable formats

16. Shall include software designed to control the instrument from an external computer including the following key features:

a. Ready-to-use application test library

b. Multiple measurement modes (application test, classic test, tracer test, oscilloscope view and quick test)

c. Multiple measurement functions (spot, sweep, time sampling, C-V, C-f, C-t, etc.)

d. Data display, analysis and arithmetic functions

e. Workspace and data management

f. External instrument control

g. Multiple programming methods (Remote control and FLEX GPIB control)

h. Multiple interfaces (USB, LAN, GPIB and digital I/O

17. Shall have the following general specification:

a. Power requirement

i. AC Voltage: 90 V to 264 V

ii. Line frequency: 47 Hz to 63 Hz

b. Maximum Volts-amps (VA)

i. Mainframe: 900 VA

ii. Test Fixture: 470 VA

c. Regulatory compliance

i. EMC:

1. IEC 61326-1 / EN 61326-1

DLA Product Test Center, VTA

2. Canada: ICES/NMB-001

3. AS/NZS CISPR 11

ii. Safety:

1. IEC61010-1 / EN 61010-1

2. CAN/CSA-C22.2 No. 61010-1

d. Certifications

i. CE

ii. cCSAus

iii. RCM

iv. KC

18. Shall have: a Certificate of Calibration and a 1 year Warranty.

B. Required Upgrades and Accessories - Brand Name or Equal:

1. Shall at a minimum have: Included Accessories:

a. Measurement cables and adapter

b. System cable, 1 ea.

c. CMU cable, 1 ea

d. Digital I/O cable, 1 ea.

e. Digital I/O cable, 1 ea.

f. Blank Silicon Plate, 1 ea.

g. 3-pin Inline Package Socket Module, 1 ea

h. Curve Tracer Test Adapter Socket Module, 1ea

i. Thermocouple (high temperature resistant, 75 cm), 2 ea.

j. 200 mm high current cable, 2 ea.

k. 300 mm high current cable, 2 ea.

l. 200 mm normal cable, 8 ea.

m. 300 mm normal cable, 6 ea.

n. Banana pin adapter, 18 ea.

o. Mini alligator clip, 14 ea.

p. Large clip, 4 ea.

q. Universal Socket Module, 1 ea.

r. Gate Charge Socket Adapter, 1 ea.

s. Keyboard, 1 ea.

t. Mouse, 1 ea.

u. Stylus pen, 1 ea.

v. Power cable, 2 ea.

C. Other Requirements:

1. Delivery: 12 Weeks from date of the award.

2. Contractor shall give notification to Jeremiah L. Jones (jeremiah.l.jones@dla.mil /614-692-8955) when the instrument is ready to be delivered.

3. All shipping costs are to be included in the contracted price.

4. The instrument shall be delivered to:

Defense Supply Center Columbus 300 North James Road, Bldg 17-3 Mark for: DLA Product Test Center, Bldg 11-7 (TE Lab) mailto:jeremiah.l.jones@dla.mil

DLA Product Test Center, VTA

Attn: Jeremiah L. Jones (jeremiah.l.jones@dla.mil / 614-692-8955) Columbus, Ohio 43213

5. On-site training up to 3 associates by the factory representatives(s) shall be at the DLA Land and Maritime Product Test Center location, Columbus, OH.

6. All training materials shall be supplied by the contractor.

7. The contractor shall be responsible for installation and start up, which consists of 1) turn system on,

2) run diagnostics, and verify system operation, 3) demonstrate to PTC personnel the system meets specifications.

8. Invoices shall be submitted through Wide Area Workflow (WAWF), See DFARS Clause 252.232- 7006 Wide Area Workflow Payment Instructions for detailed instructions on how to submit invoices.

mailto:jeremiah.l.jones@dla.mil