11-0017-20; 1-02_KR.TS.docx

N00173-20-RFI-ST01

Specifications Metal Etch Inductively Coupled Plasma Reactive Ion Etching (ICP - RIE) Tool

1. General Requirements

1.1. Scope

This specification describes the minimum technical requirements and the minimum acceptable performance standards for a Metal Etch Inductively Coupled Plasma Reactive Ion Etching (ICP - RIE) Tool using Chlorine and Fluorine chemistries to be installed by the Vendor in the Nano Science Institute, Building 250, at the Naval Research Laboratory (NRL) Washington, DC. The Metal Etch ICP - RIE Tool will be placed in a multiple user facility and must provide ease of operation and safety to those in the facility.

1.2. Installation Site

The Vendor shall install the Tool, at Naval Research Laboratory, Washington DC 20375, in building 250 Nano Science Institute clean room at a specific location to be designated by the Contracting Officer's Representative (COR). The Vendor shall install the Tool in a manner consistent with typical clean-room operating procedures.

1.3. Description and Primary Tool Components

The Tool must be capable of dry etching a wide variety of materials including but not limited to Metal Oxides, mixed Metal Oxides, Nitrides, Carbides, Silicides, Tellurides, Selenides, Nickel, Chrome, and Aluminum. The Tool must meet the specifications as indicated in the process specifications section of this document. The Tool is to be installed within a Class 100 clean room. It is intended for use by multiple users within that site. It must be computer controlled via menu-driven software and be user friendly.

2. Requirements

2.1. Base console housing the electronic sub systems, control units, pneumatics, and turbo-molecular pump.

2.2. Operating system providing a current Windows based operating system for operator interface of process control, wafer handling, real time data logging of process parameters, machine status and recipe management. System must provide user logon and password control entry.

2.3. ICP process chamber which must be equipped as follows:

· High conductance pumping port (ISO200).

· Electric resistive heating for heating process chamber walls to reduce condensation of process effluents.

· View port and end-point-detection ports for optical emission and laser interferometer.

· Two KF25 ports for vacuum gauge and rough pumping of chamber.

2.4. Tool must have an aluminum lower electrode compatible with wafers up to 200mm diameter. The electrode must be cryo-cooled by liquid nitrogen and resistively heated providing a temperature range between -150oC and +400oC with a stability of 1 degree C.

2.5. The electrode must have mechanical wafer clamping with helium backside cooling with clamping options for wafers up to 8”. The system will have a standard 100mm quartz clamp included. The clamping is for helium backside cooling to promote heat transfer between the wafers and the electrode.

2.6. Tool must have a high-density 300mm diameter plasma etch source with an alumina discharge chamber of at least a 300mm inside diameter with the following features:

· a maximum output of no less than 3kW RF power @ 2 MHz

· an automatic matching unit that is close-coupled to the source. The source is to use an electrostatic shield to produce a purely inductive plasma.

2.7. RIE Plasma Source / substrate bias to be provided by an independent 600W 13.5 MHz RF generator connected to the lower electrode through a close-coupled automatic matching unit

2.8. A 100-millitorr (mT), temperature-stabilized capacitance manometer with isolation valve must be provided for process control. An active penning gauge is to be provided for chamber base pressure measurement.

2.9. The ISO200 pumping port is to be fitted with a VAT series brand integrated controller or equivalent variable gate valve for chamber isolation and automatic process pressure control.

2.10. An electric heating jacket must be provided for the pump-down pipe to reduce condensation of process effluents.

2.11. Tool must have a stainless steel gas pod with a minimum capacity of 12 mass-flow-controlled process gas lines, four of which must be capable of handling toxic gases and six for non-toxic gas lines. All corrosive process gas lines must be double walled and use metal-sealed mass flow controllers (MFC’s). All non-corrosive gas lines must use elastomer sealed MFC’s. Each line must be provided with an MFC for the accurate control of gas flows.

2.12. Tool must include load lock chamber for vacuum loading of a single wafer into the process chamber. The load lock is to be provided with its own roughing pump.

2.13. Process and base-pressure pumping must be accomplished by:

· Corrosive compatible Turbo-molecular pump. Edwards STPA1603CV or Edwards equivalent.

· Backing pump is a 100 m3/hr. roughing pump. Edwards IGX100M or Edwards equivalent.

3. Minimum Process Specifications:

4. Option

4.1. Extended Maintenance. Vendor shall provide an option for three-year extended maintenance beyond the warranty period.

5. Training

5.1. Vendor will provide 1 day of Tool hardware familiarization. Can be done concurrently during Tool commissioning.

5.2. Vendor will provide process training concurrent with Process Acceptance.

6. Warranty

6.1. Vendor will provide a twelve (12) month warranty from the date of Process Acceptance at the NRL site, including all parts and labor and telephone response during normal business hours with 3 day or less on site response to breakdowns.

7. Documentation

7.1. Vendor shall provide electronic copies of the following:

a. Full operating instructions suitable for use in teaching new users.

b. Nitrogen, water, air and vacuum schematics.

c. Electrical wiring schematics.

d. Complete mechanical schematics suitable to guide future modifications and repairs.

e. Trouble shooting manual for common servicing and repairs of electrical, mechanical and computer software problems.