Project Grant 2240337

Award Date 1/1/23
Completion Date 12/31/24
Dollars Obligated $292K
Federal Grant Program
47.041
Assistance Type
Project Grant
Place of Performance
College Park, MD 20742, USA
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The research aims to develop robust manufacturing techniques with precise control over placement of individual dopant atoms in silicon. Using a scanning tunneling microscope for atomic-scale lithography, the work will advance from demonstrating perfect placement of single phosphorus dopant atoms to reliably fabricating atom-scale silicon devices through controlled placement of individual atoms. The research also seeks to extend this capability to boron acceptors and multi-dopant structures. Transport experiments and density functional theory simulations will verify fabrication of designed atomic geometries. Results of this research on atom-based silicon quantum devices could enable manufacturing at size scales not currently possible.

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