This $323,000 federal Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences (CFDA 47.049) program supports research to develop highly conductive p-type III-nitride semiconductor materials, particularly aluminum gallium nitride (AlGaN), for use in bright deep ultraviolet (DUV) light-emitting diodes (LEDs).
The research team at the Research Foundation for the State University of New York (RF-SUNY) at the University at Albany is investigating the use of beryllium (Be) as an alternative p-type dopant to magnesium in order to improve the efficiency of DUV LEDs operating below 270 nm. Their preliminary results indicate that Be-related impurity complexes can enable the realization of conductive p-type III-nitride materials. The 3-year project aims to fabricate and characterize these Be-doped AlGaN semiconductors to advance the development of high-performance DUV LED technology, with potential applications in areas like water purification, disinfection, and phototherapy.
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