The National Science Foundation (NSF) awarded a $199,997 Project Grant under the Engineering program (CFDA 47.041) to Texas State University for the period of July 1, 2024 to June 30, 2026. The project aims to address the challenges of integrating P-type diamond films with N-type ultrawide bandgap gallium oxide (Ga2O3) layers for high-performance electronic device applications. The key objectives are to develop a novel approach using an ultra-thin quenched carbon interlayer to enable high-quality, uniform diamond growth on Ga2O3 while mitigating thermal and lattice mismatch issues. The project will investigate the structural and electrical properties of the device layers and heterointerface, and fabricate prototype Ga2O3-diamond P-N and P-I-N devices to assess their performance. The outcomes of this project are expected to contribute to the design of advanced, more compatible Ga2O3-based power electronic devices. The award also includes an educational component to train undergraduate and graduate students, particularly from underrepresented groups, and provide exposure to high school students through outreach activities.