This $531,730 Project Grant award from the National Science Foundation (NSF) Engineering program (CFDA 47.041) will support research and development of a new type of non-volatile memory device based on sliding ferroelectricity. The key products and services to be delivered include:
- Fundamental studies to understand sliding ferroelectric effects in atomically thin layered materials and their application in ferroelectric tunneling junction memory devices
- Prototyping, benchmarking, and optimization of memory devices leveraging sliding ferroelectricity to achieve ultrafast operation, ultralow energy consumption, and multistate functionality
- Integration of new techniques developed through this project into undergraduate and graduate education programs to foster STEM career enthusiasm
This 5-year project, awarded to the University of Wisconsin - Madison, aims to advance next-generation memory technologies that can address the escalating data capacity and energy demands of modern computing and data-driven applications such as the Internet of Things, smart manufacturing, and AI-powered medical care. No subawards are planned under this grant.
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