The National Science Foundation (NSF) awarded a $518,949 Project Grant under the NSF Engineering program (CFDA 47.041) to Arizona State University (ASU) to design and fabricate high aspect ratio beta-gallium oxide (β-Ga2O3) finFET devices. The project aims to develop these wide bandgap semiconductor transistors capable of achieving high breakdown voltage and low on-resistance, surpassing the performance of current silicon carbide (SiC) and gallium nitride (GaN) devices. Key focus areas include investigating in-situ gallium etching techniques, developing etching and regrowth processes for high-quality contacts and dielectric interfaces, and exploring field management strategies for multi-kilovolt breakdown voltages. The successful outcome is expected to enable β-Ga2O3 three-terminal devices that outperform state-of-the-art wide bandgap power electronics, facilitating the scalability and widespread adoption of this technology. The award period is from October 1, 2024 to September 30, 2027.
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