Project Grant 2221750

The National Science Foundation awarded a three-year $435,000 Project Grant to the University of California, Berkeley under the Mathematical and Physical Sciences program (CFDA 47.049) to explore correlated electron states in single-layer field-effect transistors. Through October 2022 to September 2025, the university will characterize the local electronic structure of highly correlated two-dimensional materials using a combination of gate-tunable field effect transistors and scanning tunneling microscopy. Researchers will incorporate single-layer materials grown by molecular beam epitaxy into gate-tunable devices to enable exploration of new physical regimes accessible to scanning tunneling microscopy. The additional gate tunability of carrier density will allow for unique atomic-resolved studies of low-dimensional electronic behavior in these correlated systems. Findings will provide new insights into fundamental questions in reduced-dimensionality physics.