This $360,000 Project Grant awarded by the National Science Foundation's (NSF) Division of Materials Research under the Mathematical and Physical Sciences program (CFDA 47.049) aims to revolutionize computer memory by developing new materials and devices for high-density, energy-efficient magnetic random-access memory (MRAM). The research project will address limitations of conventional spin-orbit torque switching in MRAM devices by growing wafer-scale epitaxial van der Waals spin...
This $389,999 federal Project Grant award from the National Science Foundation's Engineering program (CFDA 47.041) supports research to achieve an in-depth understanding of the ultrafast dynamics and devices based on new classes of antiferromagnetic (AFM) materials. The goal is to overcome speed and energy efficiency limitations in current technologies and enable next-generation ultrafast (>100 GHz) antiferromagnetic spintronic applications. The research involves investigating the unique...
This Project Grant award, provided by the National Science Foundation (NSF) under the Mathematical and Physical Sciences (CFDA 47.049) program, aims to revolutionize computer memory by developing new materials and devices for high-density magnetic random-access memory (MRAM). The $360,000 award will support collaborative research to enable highly efficient switching in MRAM devices using wafer-scale epitaxial van der Waals spin heterostructures. The project focuses on growing advanced...
Carnegie Mellon University was awarded a $344,942 Project Grant from the National Science Foundation's Engineering program (CFDA 47.041) to support research on non-volatile magnetic memory devices utilizing field-free spin-orbit torque switching of perpendicularly polarized magnets. The research aims to demonstrate field-free deterministic magnetization switching of three classes of ferromagnetic materials with perpendicular magnetic anisotropy using electric field-induced out-of-plane spin...
This National Science Foundation (NSF) Mathematical and Physical Sciences Federal Grant Program award supports theoretical research on antiferromagnets, or materials with no net magnetization, and their potential for use in next-generation non-volatile memory devices. The $240,000 award to Georgetown University will fund activities to: Establish quasiparticle tight-binding models in antiferromagnets to understand electron-disorder interactions. Create new numerical methods to resolve the...
This Project Grant award from the National Science Foundation's (NSF) Engineering program (CFDA 47.041) provides $275,000.00 to the University of Maryland, College Park to research energy-efficient skyrmion-based memory devices. The project aims to integrate magneto-ionic and ferroelectric control of two-dimensional (2D) magnets to enable low-voltage manipulation of magnetic skyrmions for potential memory applications. Through this 3-year research effort, the university will investigate...
This $592,502 National Science Foundation project grant supports research at Michigan Technological University to develop novel magnetic nanomaterials compatible with silicon technology. Funded under the NSF Engineering program (CFDA 47.041), the three-year award will advance fundamental knowledge and computational modeling of transition metal silicide nanostructures. A multidisciplinary team will use integrated experimental and computational methods to fabricate and characterize...
This $279,854 project grant from the National Science Foundation's Mathematical and Physical Sciences program will support research at The Ohio State University to develop new spintronic material platforms for energy-efficient memory and computing applications. The investigators will focus on heterostructures consisting of ultrathin ferrimagnetic insulator films and adjacent metallic layers. They will grow and characterize high-quality bilayer films to optimize properties for applications by...
The National Science Foundation (NSF) awarded a $395,192 Project Grant to Wayne State University from the Mathematical and Physical Sciences program (CFDA 47.049). The grant supports research to synthesize and characterize antiferromagnetic materials for developing novel hybrid magnonic functionalities. The project team will fabricate thin film heterostructures composed of antiferromagnetic oxides like iron, chromium, and nickel, and engineer interactions between their high-frequency magnetic...
The National Science Foundation (NSF) awarded a $563,690 Project Grant under the Mathematical and Physical Sciences program (CFDA 47.049) to the Board of Regents of the University of Nebraska for the project "HETEROMOLECULAR INTERFACE DESIGN FOR BETTER MULTIFERROIC MOLECULAR SPINTRONICS". The goal of this research is to develop a highly stable, energy-efficient molecular-based memory device that can potentially address the growing need for computer memory while reducing energy...
This $359,500 National Science Foundation project grant supports the development of scalable three-terminal memory devices based on silicon-compatible antiferromagnetic materials at Northwestern University from June 2022 through May 2025. The university aims to design, fabricate, and characterize nonvolatile memory devices utilizing conductive antiferromagnetic materials like Mn3Sn, Mn3Ga, and IrMn3 that can be sputter deposited on silicon substrates. The project will demonstrate electrical read and write functionality in these devices down to industry-relevant bit diameters by controlling magnetic state through current-induced spin-orbit torque from an adjacent heavy metal layer and translating Néel vector modification into resistance changes using a tunneling magnetoresistance structure. Device performance will be evaluated and compared to existing ferromagnet-based memory technologies. If successful, these antiferromagnetic memory devices could enable magnetic memories to address broader markets than currently possible under the NSF's Engineering grant program (CFDA 47.041).