Cooperative Agreement FC2606NT42863

This $137,399 National Science Foundation project grant supports research at North Carolina State University to develop a novel solid phase epitaxy process for highly doped p-type junctions in gallium nitride. The goal is to enable high current and high voltage power devices for more efficient power electronic systems. The research will involve molecular dynamic and process simulation, ion implantation, optimization of solid phase epitaxy annealing, fabrication of diode structures, and...

This Project Grant award from the National Science Foundation's (NSF) Mathematical and Physical Sciences (CFDA 47.049) program provides $323,000 in funding to The Research Foundation for the State University of New York (RF-SUNY) at the University at Albany. The goal of the project is to develop highly conductive p-type aluminum gallium nitride (AlGaN) semiconductor materials through the use of beryllium (Be) co-doping. The research team plans to fabricate conductive p-type AlGaN using in-situ...

This Project Grant award from the National Science Foundation (NSF) Mathematical and Physical Sciences (CFDA 47.049) program provides $315,000 to Virginia Commonwealth University (VCU) to conduct research on co-doping ultra/wide-bandgap III-nitride semiconductors to achieve conductive p-type materials. The goal is to develop highly efficient p-type III-nitride materials, particularly for bright deep ultraviolet (DUV) light-emitting diodes (LEDs), by using beryllium (Be) as an alternative...

This $419,379 Project Grant awarded by the National Science Foundation's (NSF) Engineering program (CFDA 47.041) aims to develop innovative gallium nitride (GaN)-based terahertz (THz) photoconductive emitters with an optical-to-THz energy conversion efficiency approaching or exceeding 100%. The research project will focus on three core areas: (1) designing GaN photoconductive switches with high breakdown electrical fields, (2) investigating ultrafast carrier dynamics and THz generation in...

This $476,190 Project Grant awarded by the Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) program (CFDA 81.135) to North Carolina State University (NC State) supports the development of electrically conductive thick gallium nitride (GaN) substrates. The goal is to enable the creation of vertical GaN power electronics and demonstrate the feasibility of lateral expansion in crystals grown using the proposed method to validate its use for larger diameter substrates. This...

This Project Grant award of $200,000 was provided by the Department of Energy (DOE) Office of Science under the Office of Science Financial Assistance Program (CFDA 81.049) to Adroit Materials, Inc., a small business specializing in III-nitride semiconductor technology. The funding supports the development of a 1.2 kV class gallium nitride (GaN) vertical U-MOSFET with reach-through protection and shielding by magnesium implantation. This device is intended to advance power electronics...

CAREER Award Summary: Programmable Doping in Wide-Bandgap Materials Vanderbilt University received a $369,607 CAREER award from the National Science Foundation's Division of Materials Research under the Mathematical and Physical Sciences program (CFDA 47.049), effective August 1, 2026, through July 31, 2031. The primary deliverable is the development of a programmable doping strategy for wide-bandgap semiconductors such as gallium nitride and aluminum nitride. This approach enables post-growth...

This $1.5 million project grant from the National Science Foundation's Engineering program (CFDA 47.041) supports the development of gallium oxide semiconductor technologies for high-voltage, high-power applications. Led by The Research Foundation for the State University of New York, the consortium aims to advance gallium oxide material synthesis, device fabrication, and circuit integration to enable power switches and converters with over 10 kilovolt ratings. Specific objectives include...

The Georgia Institute of Technology received a $550,000 project grant award from the Department of the Air Force Materiel Command Research Laboratory to develop semiconducting aluminum nitride as a new pathway for high-voltage, power, and temperature ultra-wide bandgap power electronic components. Funded through the Air Force Defense Research Sciences Program (CFDA #12.800), which aims to maintain U.S. technological superiority in scientific areas relevant to Air Force needs, the three-year...

This Project Grant from the National Science Foundation's $303,000 Engineering program (CFDA 47.041) funds research at Penn State University from June 2022 to May 2025 related to single photon emission in lanthanide-doped two-dimensional materials and devices. The researchers will evaluate incorporating rare-earth elements like cerium and erbium into two-dimensional semiconductors to enable a quantum optical platform compatible with optical communications. Objectives include controlling doping...