Full and Open Competition after exclusion of sources
Major Defense Program
Not listed
Pricing Type
Firm Fixed Price
Place of Performance
Sterling, VA, USA
Solicitation Procedures
Negotiated Proposal / Quote
Number Of Offers Received
500
Legislative Mandate
Not listed
National Interest Action
Not listed
Research Type
SBIR Program Phase I Action
Primary Consortia Member
Not listed
This is a two-phase Small Business Innovation Research (SBIR) program contract awarded by the National Aeronautics and Space Administration (NASA) to Genesic Semiconductor Inc., a minority-owned small business. The $125,000 Phase I contract aims to develop integrated silicon carbide (SiC)-based analog and digital circuits, including SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs), to enable a monolithic, highly integrated gate driver circuit. Key goals include demonstrating radiation-hardened SiC PMOS devices and an NMOS-only gate drive buffer. The Phase II contract, contingent on successful Phase I results, will focus on building a complete SiC CMOS-based gate drive circuit integrated with a 1200 V SiC DMOSFET. This contract supports NASA's need for highly integrated SiC-based electronics systems for power conversion applications.