Full and Open Competition after exclusion of sources
Major Defense Program
Not listed
Pricing Type
Firm Fixed Price
Place of Performance
Sterling, VA, USA
Solicitation Procedures
Negotiated Proposal / Quote
Number Of Offers Received
500
Legislative Mandate
Not listed
National Interest Action
Not listed
Research Type
SBIR Program Phase II Action
Primary Consortia Member
Not listed
This is a $755,000 Firm Fixed Price contract awarded by the National Aeronautics and Space Administration (NASA) Shared Services Center to Genesic Semiconductor Inc., a small disadvantaged business, under the Small Business Innovation Research (SBIR) program. The contract is for the development of a fully integrated, radiation-hardened silicon carbide (SiC) gate drive circuitry that can be monolithically integrated with 1200V SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs). The goal is to enable the realization of a monolithic power switching platform with improved performance and radiation hardness. This Phase II effort builds upon a previous Phase I contract, where an NMOS-only gate drive buffer circuit was demonstrated. The contract has a completion date of December 31, 2019.