This Small Business Innovation Research (SBIR) Phase I contract, awarded by the National Aeronautics and Space Administration (NASA) Shared Services Center, is for the development of silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with radiation-resistant gate oxides capable of withstanding 600 volts. With a potential value of $149,994, this firm fixed price purchase order was awarded on July 25, 2022 to Scdevice LLC located in Portland, Oregon. The research is...
This is a $124,990.00 firm-fixed-price Phase I Small Business Innovation Research (SBIR) contract awarded by the National Aeronautics and Space Administration (NASA) to Coolcad Electronics, LLC, a small business. The contract is for the development of a high temperature and radiation tolerant silicon carbide (SiC) technology comprised of an integrated circuit and complementary power device. This technology is intended for use in power applications such as spacecraft motor drive modules for...
This SBIR Phase II contract, valued at $749,645.00, was awarded by the National Aeronautics and Space Administration (NASA) to United Silicon Carbide, Inc. The contract aims to develop radiation-tolerant, extreme temperature-capable electronics based on silicon carbide (SiC) technology to support NASA's planned missions, such as in-situ exploration of Venus and long-duration Europa-Jupiter missions. The SiC junction field-effect transistor (JFET) integrated circuits produced under this...
This is a Small Business Innovation Research (SBIR) Phase I contract awarded by NASA to Coolcad Electronics, Inc., a small for-profit semiconductor company specializing in advanced technologies like silicon carbide (SiC) and gallium nitride (GaN). The $125,000 firm-fixed-price contract aims to develop radiation-tolerant high-voltage and low on-resistance SiC power devices to meet NASA's capability and performance goals for upcoming missions such as the Io Observer, Saturn Probe, and Europa...
This is a $125,000 Phase I Small Business Innovation Research (SBIR) contract awarded by the National Aeronautics and Space Administration (NASA) to Genesic Semiconductor Inc., a small disadvantaged business, for the development of radiation-hardened silicon carbide (SiC) power devices such as vertical DMOSFET transistors and Schottky rectifiers. The targeted applications are for a 30 kilowatt power processing unit (PPU) on-board a Hall thruster propulsion system, which requires devices...
This is a $249,999.00 firm fixed price purchase order contract awarded by the National Aeronautics and Space Administration (NASA) Langley Research Center to Frequency Management International, Inc., a small business. The purpose is to design single-event effect (SEE) and total ionizing dose (TID) hardened silicon carbide power metal-oxide-semiconductor field effect transistors (SiC power MOSFETs) for use in next-generation aerospace power systems, including high-temperature boost power...
The National Aeronautics and Space Administration (NASA) awarded a $1,043,139 Small Business Innovation Research (SBIR) Program Phase II contract to CFD Research Corporation to develop radiation-hardened silicon carbide (SiC) power electronics for future NASA science and exploration missions. The contract aims to address the high vulnerability of SiC devices to heavy-ion induced degradation and failure, which has precluded their use in space power management and distribution (PMAD)...
<p>The National Aeronautics and Space Administration (NASA) awarded a Small Business Innovation Research (SBIR) Program Phase I contract to Logisic Devices, Inc., a minority-owned, small disadvantaged business, for the development of radiation-tolerant, high-voltage silicon carbide devices. The firm-fixed-price contract, valued at $124,408.00, was awarded on August 31, 2020, with a completion date of March 1, 2021. The contract was set aside for small businesses.</p>
This is a $124,222.00 Small Business Innovation Research (SBIR) Phase I contract awarded by the National Aeronautics and Space Administration (NASA) to United Silicon Carbide, Inc. The contract is focused on developing radiation-tolerant, extreme temperature-capable electronics for future NASA missions, such as in-situ exploration of Venus and long-duration Europa-Jupiter missions. United Silicon Carbide will extend the capability of its silicon carbide (SiC) junction field-effect transistor...
This is a $755,000 Firm Fixed Price contract awarded by the National Aeronautics and Space Administration (NASA) Shared Services Center to Genesic Semiconductor Inc., a small disadvantaged business, under the Small Business Innovation Research (SBIR) program. The contract is for the development of a fully integrated, radiation-hardened silicon carbide (SiC) gate drive circuitry that can be monolithically integrated with 1200V SiC power metal-oxide-semiconductor field-effect transistors...