Scdevice LLC

Scdevice LLC is a for-profit organization engaged in research and development of advanced semiconductor materials and devices, particularly those based on silicon carbide (SiC). It focuses on developing radiation-resistant SiC semiconductor technologies for applications in harsh environments like space.

Through federal contract awards from agencies like NASA, Scdevice LLC has undertaken research projects to develop high-voltage silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with radiation-resistant gate oxides capable of withstanding voltages up to 600V. These contracts, awarded under NASA's Small Business Innovation Research (SBIR) program, involve designing, manufacturing, and testing SiC MOSFETs for use in space applications where they need to withstand intense radiation. The awards have been set aside for total small businesses, and the work is performed at Scdevice LLC's division in Portland, Oregon.

Through federal grant awards, such as a Project Grant from the National Science Foundation (NSF) under the Technology, Innovation, and Partnerships program, Scdevice LLC has pursued the development and demonstration of radiation-tolerant, high-voltage silicon carbide semiconductor devices for space applications. The specific goal of this NSF grant is to create a silicon carbide junction barrier Schottky diode rated at 1200V that can withstand the high levels of radiation encountered in space. The grant project aims to enable smaller, lighter, and higher-performance satellites by replacing silicon-based high-voltage devices with their SiC counterparts, thereby reducing manufacturing and launch costs, as well as environmental impact.